电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2014年
9期
36-39
,共4页
带隙基准%曲率校正%温度系数
帶隙基準%麯率校正%溫度繫數
대극기준%곡솔교정%온도계수
bandgap reference%curvature correction%temperature coefifcient
在传统低压带隙基准的基础上，通过设计与热力学温度成正比的电流（IPTAT）及与热力学温度呈互补关系的电流（ICTAT），实现节点电流相减，从而产生分段线性电流作为基准源的曲率校正分量，设计了一个性能更佳的曲率校正带隙基准。电路采用低压运放及低压PTAT电流产生模块，工作电压低。Cadence仿真结果显示，在-40~125℃温度范围内，平均温度系数大约3×10-6℃-1，最低工作电压在1V左右，可用于低电源电压、高精度的集成芯片。
在傳統低壓帶隙基準的基礎上，通過設計與熱力學溫度成正比的電流（IPTAT）及與熱力學溫度呈互補關繫的電流（ICTAT），實現節點電流相減，從而產生分段線性電流作為基準源的麯率校正分量，設計瞭一箇性能更佳的麯率校正帶隙基準。電路採用低壓運放及低壓PTAT電流產生模塊，工作電壓低。Cadence倣真結果顯示，在-40~125℃溫度範圍內，平均溫度繫數大約3×10-6℃-1，最低工作電壓在1V左右，可用于低電源電壓、高精度的集成芯片。
재전통저압대극기준적기출상，통과설계여열역학온도성정비적전류（IPTAT）급여열역학온도정호보관계적전류（ICTAT），실현절점전류상감，종이산생분단선성전류작위기준원적곡솔교정분량，설계료일개성능경가적곡솔교정대극기준。전로채용저압운방급저압PTAT전유산생모괴，공작전압저。Cadence방진결과현시，재-40~125℃온도범위내，평균온도계수대약3×10-6℃-1，최저공작전압재1V좌우，가용우저전원전압、고정도적집성심편。
Based on the traditional low supply voltage bandgap reference, by designing current proportional to absolute temperature(IPTAT)and current complementary to absolute temperature(ICTAT)which are subtracted from one another, a piecewise linear current is achieved and used as the curvature correction component. Thus, a better performance curvature corrected bandgap reference is proposed. The circuits use low-voltage ampliifer and low-voltage IPTAT generator, so the operation voltage is low. Simulation results with Cadence indicate that the bandgap reference has an average temperature coefifcient of 3×10-6℃ -1 within a temperature range between-40~125℃centigrade, and the power supply is as low as 1 V, the circuits can be used in low power supply and high-precision SOCs.
