电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2014年
9期
17-20
,共4页
MOS管%导通电阻%开尔文连接%自动测试设备%待测器件%晶圆测试%管芯
MOS管%導通電阻%開爾文連接%自動測試設備%待測器件%晶圓測試%管芯
MOS관%도통전조%개이문련접%자동측시설비%대측기건%정원측시%관심
MOSFET%RDS(on)%kelvin connections%auto test equipment%device under test%circuit probing%DIE
导通电阻的准确测量是低导通电阻MOSFET晶圆测试中的一个难点。要实现毫欧级导通电阻的测试，必须用开尔文测试法；但实际的MOSFET晶圆表面只有两个电极（G、S），另外一个电极（D）在圆片的背面，通常只能将开尔文的短接点接在承载圆片的吸盘边缘，无法做到真正的开尔文连接，由于吸盘接触电阻无法补偿而且变化没有规律，导致导通电阻无法精确测量。介绍了一种借用临近管芯实现真正开尔文测试的方法，可以实现MOSFET晶圆毫欧级导通电阻准确稳定的测量。
導通電阻的準確測量是低導通電阻MOSFET晶圓測試中的一箇難點。要實現毫歐級導通電阻的測試，必鬚用開爾文測試法；但實際的MOSFET晶圓錶麵隻有兩箇電極（G、S），另外一箇電極（D）在圓片的揹麵，通常隻能將開爾文的短接點接在承載圓片的吸盤邊緣，無法做到真正的開爾文連接，由于吸盤接觸電阻無法補償而且變化沒有規律，導緻導通電阻無法精確測量。介紹瞭一種藉用臨近管芯實現真正開爾文測試的方法，可以實現MOSFET晶圓毫歐級導通電阻準確穩定的測量。
도통전조적준학측량시저도통전조MOSFET정원측시중적일개난점。요실현호구급도통전조적측시，필수용개이문측시법；단실제적MOSFET정원표면지유량개전겁（G、S），령외일개전겁（D）재원편적배면，통상지능장개이문적단접점접재승재원편적흡반변연，무법주도진정적개이문련접，유우흡반접촉전조무법보상이차변화몰유규률，도치도통전조무법정학측량。개소료일충차용림근관심실현진정개이문측시적방법，가이실현MOSFET정원호구급도통전조준학은정적측량。
It is dififcult to measure low RDS(on)of MOSFET exactly in wafer testing(CP). It is necessary to use Kelven connections for testing resistor whose resistance is lower than several milliohms. Actually, for MOSFET wafer, there are only 2 pads(G and S)which can be connected in Kelvin connections on the wafer surface. The third pole(D)is on the bottom of wafer, can only connect to edge of the chuck which hold the wafer in the course of CP, can’t achieve really Kelvin connections for MOSFET wafer testing in normal way. As the connect status for wafer and chuck is unstable, the testing result is unstable too. The paper presents a way to carry really Kelvin connections for MOSFET wafer testing by using a nearby DIE which is turned on. By this way, RDS(on)low than several milliohms can be measured exactly and stably.
