CAJ | 학술논문

在Ar气氛保护下，以钛粉、硅粉、石墨粉和金刚石粉为原料，采用无压烧结技术制备Ti3SiC2-金刚石复合材料。研究烧结温度对制备的复合材料中Ti3SiC2含量及金刚石转变的影响。结果表明：1400℃为制备Ti3SiC2-金刚石复合材料的最佳反应温度，高于此温度金刚石大量石墨化，低于此温度Ti3SiC2不能有效合成；生成的Ti3SiC2包裹在金刚石颗粒表层，两者之间存在明显的过渡区，表明在高温条件下金刚石颗粒表层发生石墨化相变；石墨化的碳元素参与Ti3SiC2合成反应，明显改善Ti3SiC2相与金刚石颗粒界面润湿性，提高Ti3SiC2与金刚石颗粒之间的界面结合力。
재Ar기분보호하，이태분、규분、석묵분화금강석분위원료，채용무압소결기술제비Ti3SiC2-금강석복합재료。연구소결온도대제비적복합재료중Ti3SiC2함량급금강석전변적영향。결과표명：1400℃위제비Ti3SiC2-금강석복합재료적최가반응온도，고우차온도금강석대량석묵화，저우차온도Ti3SiC2불능유효합성；생성적Ti3SiC2포과재금강석과립표층，량자지간존재명현적과도구，표명재고온조건하금강석과립표층발생석묵화상변；석묵화적탄원소삼여Ti3SiC2합성반응，명현개선Ti3SiC2상여금강석과립계면윤습성，제고Ti3SiC2여금강석과립지간적계면결합력。
Ti3SiC2-diamond composites were synthesized by pressureless sintering under flowing Ar atmosphere with the powders of Ti,Si,graphite and diamond. The effect of sintering temperatures on Ti3SiC2 content and diamond transformation was studied. The experimental results show that 1 400℃is the optimal temperature to synthesize desired composites. Higher temperature will result in the graphitization of diamonds. Lower temperature can not synthesize Ti3SiC2 effectively. The scanning electron microscopic analysis of as-synthesized composites shows that diamond particles are enclosed by synthesized Ti3SiC2,and obvious transition zones exist between diamond particles and Ti3SiC2. It is concluded that the graphite transformed from the surface layer of diamonds joins in the reaction of Ti3SiC2 synthesis,which significantly improves the interface wettability and increases the interface bonding between Ti3SiC2 and diamond particles.