CAJ | 학술논문

本文利用有限元的方法对碳纳米管的表面电场强度进行了数值模拟，计算了碳纳米管一维阵列在不同间距下的场发射电流。通过计算发现，在碳纳米管一维阵列中当碳纳米管之间的间距小于碳纳米管高度的三倍时，碳纳米管之间的场屏蔽效应随距离的增加而迅速衰减；当间距大于高度的三倍时，场屏蔽效应随距离的增加而非常缓慢的降低。在碳纳米管一维阵列中当碳纳米管之间的间距等于碳纳米管高度的三倍时，碳纳米管阵列的场发射电流密度最大。
본문이용유한원적방법대탄납미관적표면전장강도진행료수치모의，계산료탄납미관일유진렬재불동간거하적장발사전류。통과계산발현，재탄납미관일유진렬중당탄납미관지간적간거소우탄납미관고도적삼배시，탄납미관지간적장병폐효응수거리적증가이신속쇠감；당간거대우고도적삼배시，장병폐효응수거리적증가이비상완만적강저。재탄납미관일유진렬중당탄납미관지간적간거등우탄납미관고도적삼배시，탄납미관진렬적장발사전류밀도최대。
We numerical modulated the surface electric field of carbon nanotubes (CNT) with the finite element method (FEM) and calculated the field emission current of an infinite line of CNT at different intertube distance. We found that the field screening effect increases rapidly with the intertube distance when this distance is smaller than three times of CNT height; and the field screening effect decreases very slowly when the intertube distance is beyond three times of CNT height. The current density of the CNT line reaches maximum when the intertube distanceapproaches three times of CNT height.