CAJ | 학술논문

利用SiGe/SOI材料的高温常压氧化技术,研制了SGOI材料。通过透射电镜和Raman光谱分析,获得了SGOI材料的微结构和成份特性。实验结果表明,经过高温氧化,原来的SiGe/SOI材料中的SOI层转变成SiGe层,SiGe层的成分分布均匀,并且通过产生位错等缺陷释放应变,因而形成了具有高度弛豫SiGe层的SGOI材料。
이용SiGe/SOI재료적고온상압양화기술,연제료SGOI재료。통과투사전경화Raman광보분석,획득료SGOI재료적미결구화성빈특성。실험결과표명,경과고온양화,원래적SiGe/SOI재료중적SOI층전변성SiGe층,SiGe층적성분분포균균,병차통과산생위착등결함석방응변,인이형성료구유고도이예SiGe층적SGOI재료。
The SiGe/SOI structure materials were oxidized in oxygen atmosphere at high temperature. The sam- ples with and without oxidation were studied by TEM and Raman spectrum. The results show that the SOI layer has turned into SiGe layer after oxidation with high temperature; the Ge fraction is uniform in the SiGe layer and SiGe layer is highly relaxed. The strain in the SiGe layer has been released by producing the mismatch disloca- tions. Therefore, the high relaxed SGOI films with high Ge fraction are fabricated successfully.