CAJ | 학술논문

分析了高增益砷化镓光导开关中流注（即电流丝）一端不同辐射波长的自发辐射实验现象，导出了不同辐射波长的辐射复合系数之间的关系，拓展了电流丝的自发辐射随电流丝电流变化的数学模型．计算结果表明，丝电流相同时流注自发辐射的其他峰值强度略小于890nm自发辐射强度．
분석료고증익신화가광도개관중류주（즉전류사）일단불동복사파장적자발복사실험현상，도출료불동복사파장적복사복합계수지간적관계，탁전료전류사적자발복사수전류사전류변화적수학모형．계산결과표명，사전류상동시류주자발복사적기타봉치강도략소우890nm자발복사강도．
The spontaneous radiative phenomenon of different wavelength of radiation at one end of a stre- amer (i. e. current filament) in high gain GaAs photoconductive semiconductor switches (PCSS) was ana- lyzed. The relationship among radiative recombination coefficients of different radiative wavelengths was in- duced. And the mathematical model of spontaneous radiation of current filament with the change of current filament was expanded. The results show that the other intensity peaks of spontaneous radiation of the stre- amer are slightly less than the spontaneous radiation intensity of 890nm when the filament currents are the same .