电网技术
電網技術
전망기술
POWER SYSTEM TECHNOLOGY
2013年
11期
3288-3294
,共7页
韩笑%高迎慧%王剑乔%孙鹞鸿%严萍
韓笑%高迎慧%王劍喬%孫鷂鴻%嚴萍
한소%고영혜%왕검교%손요홍%엄평
高频高压充电电源%开关暂态干扰%杂散电容%频域分析%电磁干扰
高頻高壓充電電源%開關暫態榦擾%雜散電容%頻域分析%電磁榦擾
고빈고압충전전원%개관잠태간우%잡산전용%빈역분석%전자간우
high frequency and high voltage capacitor charging power supply%transient switching interference%stray capacitance%frequency-domain analysis%electromagnetic interference
串联谐振式充电电源工作在高频开关状态,由电源主电路传导至测量电路、控制电路的干扰不仅要考虑开关频率干扰,也要考虑开关暂态干扰。提出了一种利用输出电流波形幅值计算谐振回路中集总参数的方法;通过列写高频变压器简化二端口网络入端阻抗方程,改进并建立了包含分布电容的高频高压变压器模型;验证了一种可模拟半导体开关反向恢复过程的数学模型,该模型通过计算器件反向恢复过程中的p区多余存储电荷,来判断反向恢复过程中的不同阶段并进行过程拟合。利用所建电源模型对工作频率为20 kHz的40 kW/10 kV充电电源开关暂态过程进行了仿真,并和充电电源样机实测数据进行了对比。模型仿真结果可良好吻合实验结果,为分析和减小高频高压充电电源传导干扰提供指导作用。
串聯諧振式充電電源工作在高頻開關狀態,由電源主電路傳導至測量電路、控製電路的榦擾不僅要攷慮開關頻率榦擾,也要攷慮開關暫態榦擾。提齣瞭一種利用輸齣電流波形幅值計算諧振迴路中集總參數的方法;通過列寫高頻變壓器簡化二耑口網絡入耑阻抗方程,改進併建立瞭包含分佈電容的高頻高壓變壓器模型;驗證瞭一種可模擬半導體開關反嚮恢複過程的數學模型,該模型通過計算器件反嚮恢複過程中的p區多餘存儲電荷,來判斷反嚮恢複過程中的不同階段併進行過程擬閤。利用所建電源模型對工作頻率為20 kHz的40 kW/10 kV充電電源開關暫態過程進行瞭倣真,併和充電電源樣機實測數據進行瞭對比。模型倣真結果可良好吻閤實驗結果,為分析和減小高頻高壓充電電源傳導榦擾提供指導作用。
천련해진식충전전원공작재고빈개관상태,유전원주전로전도지측량전로、공제전로적간우불부요고필개관빈솔간우,야요고필개관잠태간우。제출료일충이용수출전류파형폭치계산해진회로중집총삼수적방법;통과렬사고빈변압기간화이단구망락입단조항방정,개진병건립료포함분포전용적고빈고압변압기모형;험증료일충가모의반도체개관반향회복과정적수학모형,해모형통과계산기건반향회복과정중적p구다여존저전하,래판단반향회복과정중적불동계단병진행과정의합。이용소건전원모형대공작빈솔위20 kHz적40 kW/10 kV충전전원개관잠태과정진행료방진,병화충전전원양궤실측수거진행료대비。모형방진결과가량호문합실험결과,위분석화감소고빈고압충전전원전도간우제공지도작용。
The inverter and rectifier of series resonant capacitor charging power supply (CCPS) work in high-frequency switching state, so for the electromagnetic interferences (EMI), which flow from the main circuit of CCPS to measuring and control circuits, the switching frequency interference as well as the transient switching interference should be considered. A method to calculate the lumped parameters in resonant circuit by use of output current amplitude data is proposed: by means of writing input impedance equation of simplified two-port network of high-frequency transformer a high frequency and high voltage transformer model including stray capacitance is built and improved;a mathematical model that can simulate the reverse recovery process (RRP) of semiconductor switches is verified, and through calculating the amount of surplus storage charge in p-region during RRP of semiconductor switches this mathematical model judges different stages during the recovery process and performs process fitting. Using the built model the transient switching interference from the CCPS, whose working frequency is 20kHz, rated capacity is 40kW and rated voltage is 10kV, is simulated and simulation results are contrasted with the measured data of the prototype of CCPS. Contrast result shows that the simulation results of the built model confirm to experimental results well, so this research is available for reference to the analysis and reduction of EMI from high frequency and high voltage CCPS.