CAJ | 학술논문

从导带、价带和浸润层的能级跃迁出发，采用分段模型对量子点半导体光放大器的增益和自发辐射进行了数值研究．物理模型包括自发辐射行波方程和各能级栽流子与光子数速率方程．经过大量数值计算，得到基态电子占用概率随注入光脉冲的变化，以及增益动态过程（饱和与恢复）和输出光脉冲的时域波形畸变．进一步研究了量子点光放大器自发辐射谱和增益平坦性，结果表明自发辐射功率随输入信号功率增大而减小，引入合适的钳制光，可在20nm带宽内获得小于0．3dB的增益平坦度，或者40nm带宽内小于1．0dB．
종도대、개대화침윤층적능급약천출발，채용분단모형대양자점반도체광방대기적증익화자발복사진행료수치연구．물리모형포괄자발복사행파방정화각능급재류자여광자수속솔방정．경과대량수치계산，득도기태전자점용개솔수주입광맥충적변화，이급증익동태과정（포화여회복）화수출광맥충적시역파형기변．진일보연구료양자점광방대기자발복사보화증익평탄성，결과표명자발복사공솔수수입신호공솔증대이감소，인입합괄적겸제광，가재20nm대관내획득소우0．3dB적증익평탄도，혹자40nm대관내소우1．0dB．
Based on the energy level transitions in the conduction band, the valence band, and the wetting layers, the spontaneous emission process and the gain dynamics in the quantum dots semiconductor optical amplifier (QD-SOA) is investigated by a numerical model, which includes a series of traveling-wave equations for the spontaneous emission, and a series of rate equations for the carriers and photons. The amplifier is split into a number of sections for the simulations of the carriers and photons evolution along the propagation distance in the QD-SOA. The dependence of the electron occupation probability of the ground state on the input optical pulse, hence the gain dynamics (saturation and recovery) and the distortion of the output optical pulse, are obtained with plenty of computations. The amplified spontaneous emission spectra and the gain flatness of the QD-SOA are simulated, and the results show that the ASE decreases with the input optical power, and the gain flatness will be less than 0.3 dB in a band of about 20 nm, or 1.0 dB in 40 nm.