金陵科技学院学报
金陵科技學院學報
금릉과기학원학보
JOURNAL OF JINLING INSTITUTE OF TECHNOLOGY
2012年
3期
38-41
,共4页
薄膜%多晶硅%铝诱导晶化
薄膜%多晶硅%鋁誘導晶化
박막%다정규%려유도정화
thin films%polycrystalline silicon%aluminum-induced crystallization
先在玻璃衬底上制备Mo、掺锡氧化铟（ITO）和掺铝氧化锌（AZO）导电电极材料，然后分别以普通玻璃、玻璃／Mo、玻璃／ITO和玻璃／AzO为衬底，沉积a—Si／SiO。／Al叠层膜，于450℃退火2h。XRD测试表明，4种衬底上非晶硅均可以被诱导生成多晶硅薄膜，因此Mo、ITO和AZO均可以作为铝诱导多晶硅器件的电极材料。
先在玻璃襯底上製備Mo、摻錫氧化銦（ITO）和摻鋁氧化鋅（AZO）導電電極材料，然後分彆以普通玻璃、玻璃／Mo、玻璃／ITO和玻璃／AzO為襯底，沉積a—Si／SiO。／Al疊層膜，于450℃退火2h。XRD測試錶明，4種襯底上非晶硅均可以被誘導生成多晶硅薄膜，因此Mo、ITO和AZO均可以作為鋁誘導多晶硅器件的電極材料。
선재파리츤저상제비Mo、참석양화인（ITO）화참려양화자（AZO）도전전겁재료，연후분별이보통파리、파리／Mo、파리／ITO화파리／AzO위츤저，침적a—Si／SiO。／Al첩층막，우450℃퇴화2h。XRD측시표명，4충츤저상비정규균가이피유도생성다정규박막，인차Mo、ITO화AZO균가이작위려유도다정규기건적전겁재료。
Different conductive electrode materials including Mo, ITO and AZO are deposited on glass. Then glass,glass/Mo, glass/ITO and glass/AZO are used as substrates to prepare for glass/amorphous/silicate/aluminum stacks. The stacks are annealed at 450 ℃ for 2 hours. It is illustrated by XRD patterns that the amorphous silicon on all substrates can be induced to crystallize to polycrystalline silicon. So all of Mo, ITO and AZO can be used as electrode materials for electronic components made of AIC polycrystalline silicon.
