山东理工大学学报：自然科学版
山東理工大學學報：自然科學版
산동리공대학학보：자연과학판
Journal of Shandong University of Technology:Science and Technology
2012年
5期
1-3,25
,共4页
反应磁控溅射%衬底偏压%Zn0%Zr%薄膜
反應磁控濺射%襯底偏壓%Zn0%Zr%薄膜
반응자공천사%츤저편압%Zn0%Zr%박막
reactive magnetron sputtering%substrate bias voltage%ZnO:Zr%thin films
以Zn：Zr（Zr片贴在金属Zn靶上面）为溅射靶材，利用直流反应磁控溅射法在Ar／O_2混合气氛中制备Zr掺杂ZnO（ZnO：Zr）薄膜．在制备ZnO：Zr薄膜时，衬底偏压在0～60V之间变化．研究结果表明，衬底偏压对薄膜的结构、光学及电学性能有很大影响．当衬底偏压从0增大到60V时，薄膜的平均光学透过率和平均折射率都单调增大，而薄膜的晶粒尺寸先增大后减小．ZnO：Zr薄膜电阻率的变化规律与晶粒尺寸相反．
以Zn：Zr（Zr片貼在金屬Zn靶上麵）為濺射靶材，利用直流反應磁控濺射法在Ar／O_2混閤氣氛中製備Zr摻雜ZnO（ZnO：Zr）薄膜．在製備ZnO：Zr薄膜時，襯底偏壓在0～60V之間變化．研究結果錶明，襯底偏壓對薄膜的結構、光學及電學性能有很大影響．噹襯底偏壓從0增大到60V時，薄膜的平均光學透過率和平均摺射率都單調增大，而薄膜的晶粒呎吋先增大後減小．ZnO：Zr薄膜電阻率的變化規律與晶粒呎吋相反．
이Zn：Zr（Zr편첩재금속Zn파상면）위천사파재，이용직류반응자공천사법재Ar／O_2혼합기분중제비Zr참잡ZnO（ZnO：Zr）박막．재제비ZnO：Zr박막시，츤저편압재0～60V지간변화．연구결과표명，츤저편압대박막적결구、광학급전학성능유흔대영향．당츤저편압종0증대도60V시，박막적평균광학투과솔화평균절사솔도단조증대，이박막적정립척촌선증대후감소．ZnO：Zr박막전조솔적변화규률여정립척촌상반．
Zr-doped ZnO thin films were fabricated in Ar/O2 mixture gas by DC reactive magne- tron sputtering from a Zn:Zr target where Zr chips were attached on the surface of the metallic Zn target. During the process of deposition, the substrate bias voltage ranges from 0 to 60 V. Re- sults indicate that the bias voltage plays an important role in the structure, optical and electrical properties of the deposited films. When the bias voltage increases from 0 to 60V, the average op- tical transmittance and refractive index of ZnO: Zr films monotoneously increase. However, the crystallite size increases initially and then decreases with increasing bias voltage. For the resistivi- ty of ZnO:Zr films, the variation is on the contrary.
