CAJ | 학술논문

以反射延迟器代替1/4波片构成的反射式横向调制光学电压传感器结构紧凑，便于实际应用。对Bi4Ge3O12(BGO)晶体反射式横向调制光学电压传感器进行理论分析，分析表明：将待测电压加于BGO晶体<001>方向，且使光沿晶体?110?方向通过时，光学电压传感器具有较好的双光路温度互补特性，传感器具有最优性能。对2种不同结构的光学电压传感器进行温度试验，试验结果验证了理论分析的正确性。
이반사연지기대체1/4파편구성적반사식횡향조제광학전압전감기결구긴주，편우실제응용。대Bi4Ge3O12(BGO)정체반사식횡향조제광학전압전감기진행이론분석，분석표명：장대측전압가우BGO정체<001>방향，차사광연정체?110?방향통과시，광학전압전감기구유교호적쌍광로온도호보특성，전감기구유최우성능。대2충불동결구적광학전압전감기진행온도시험，시험결과험증료이론분석적정학성。
Reflection-type transverse modulation optical voltage sensors, which employ reflection retarders to replace quarter-wave plates, are convenient for practical use. In this paper, reflection-type transverse modulation optical voltage sensor was analyzed theoretically, analysis shows that optical voltage sensors would have the characteristic of dual light compensating, and have the optimum performance when the measured voltage is applied to Bi4Ge3O12 crystal along the <001> direction with light wave passing through the crystal in the?110? direction. Tests were done to verify the temperature stability of the optical voltage sensors.