CAJ | 학술논문

以对氢气易于反应的钯为催化材料、钯的沉积厚度和热处理条件为变量，研究三氧化钨薄膜的物理化学性能及气体反应特性。结果表明，三氧化钨在500℃以上时呈现四方晶体的多晶态，钯沉积对三氧化钨的晶体结构没有影响，但是随着钯的添加抑制了三氧化钨的晶粒生长。500℃以上热处理时钯在薄膜表面呈现小球状，600℃以上热处理时钯粒子在薄膜表面凝结或扩散到材料内部。沉积钯2nm的薄膜在工作温度250℃时反应灵敏度和恢复特性对氢气的检测特性最好。
이대경기역우반응적파위최화재료、파적침적후도화열처리조건위변량，연구삼양화오박막적물이화학성능급기체반응특성。결과표명，삼양화오재500℃이상시정현사방정체적다정태，파침적대삼양화오적정체결구몰유영향，단시수착파적첨가억제료삼양화오적정립생장。500℃이상열처리시파재박막표면정현소구상，600℃이상열처리시파입자재박막표면응결혹확산도재료내부。침적파2nm적박막재공작온도250℃시반응령민도화회복특성대경기적검측특성최호。
We investigated physicochemical and electrical properties of a Pd-deposited WO3 thin film based hydrogen gas sensor with Pd thickness, annealing temperature and operating temperature as variables. Experimental results show that WQ3 exhibits tetragonal polycrystalline at 500 ℃. The addition of Pd suppresses grain growth of WO3. Pd is an isolated small spherical grain on WQ thin film at 500 ℃. It agglomerates an irregular large grain or diffuses into WO3 at 600 ℃, A 2 nm Pd-deposited WO3 thin film shows good response and recovery property at 250 ℃.