CAJ | 학술논문

薄膜晶体管（TFT）作为像素单元充放电的开关，其漏电流（U大小是影响液晶屏性能的重要参数之一。文章利用薄膜晶体管的非晶硅层为光敏材料的特点，通过液晶屏翻转实验、背光亮度变化实验、min flicker-Vcom变化实验测量了flicker的大小，验证了光照强度增强导致k增加后，出现了flicker增大的现象，确定了k过高导致flicker的测试方法，通过实验进一步确定了k大小对flicker的影响。
박막정체관（TFT）작위상소단원충방전적개관，기루전류（U대소시영향액정병성능적중요삼수지일。문장이용박막정체관적비정규층위광민재료적특점，통과액정병번전실험、배광량도변화실험、min flicker-Vcom변화실험측량료flicker적대소，험증료광조강도증강도치k증가후，출현료flicker증대적현상，학정료k과고도치flicker적측시방법，통과실험진일보학정료k대소대flicker적영향。
Thin film transistor (TFT) plays an important role as a charging and discharging switch of pixel. Its photo current leakage has a significant influence on the performance of LCD quality. In this paper, photosensitive characteristic of a-Si was used in the LCD screen flip experiment, backlight brightness change experiment, min flicker-Vcom change experiment and flicker was also tested. It is verified that high in the condition of illumination increased lead to serious flicker phenomenon. The influence ofimpact on flicker was further confirmed through these experiments.