高电压技术
高電壓技術
고전압기술
HIGH VOLTAGE ENGINEERING
2012年
11期
2912-2918
,共7页
吴启蒙%魏明%樊高辉%刘进
吳啟矇%魏明%樊高輝%劉進
오계몽%위명%번고휘%류진
BP神经网络%静电放电(ESD)%辐射场%电磁脉冲%曲线拟合%均方误差
BP神經網絡%靜電放電(ESD)%輻射場%電磁脈遲%麯線擬閤%均方誤差
BP신경망락%정전방전(ESD)%복사장%전자맥충%곡선의합%균방오차
BP neural network%electrostatic discharge(ESD)%radiation field%electromagnetic pulse%curve fitting%mean-square error
针对静电放电(ESD)电磁脉冲测试及其辐射场计算这一难点问题,提出了一种基于BP(back propaga-tion)神经网络的任意曲线拟合方法,并给出了任意曲线的数学解析表达式通式。根据IEC 61000-4-2标准的相关规定,采用本方法得出了理想接触式ESD电流波形的解析表达式,神经网络隐含层神经元个数选取为9时,拟合曲线均方误差(MSE)为4.491 7×10-4。提取本方法得到的理想接触式ESD电流曲线的波形参数(上升时间为0.81ns,峰值电流为14.938 5A,30ns时电流值为8.038 9A,60ns时电流值为4.037 7A),证明了该解析式满足IEC61000-4-2的相关规定。通过对6kV放电电压的工程实测ESD电流波形曲线拟合,得到工程实测ESD电流波形的解析表达式,隐含层神经元个数选取为20时,拟合曲线均方误差为0.093 5。本方法为工程实测ESD辐射场的相关计算提供了更准确的解析表达式。
針對靜電放電(ESD)電磁脈遲測試及其輻射場計算這一難點問題,提齣瞭一種基于BP(back propaga-tion)神經網絡的任意麯線擬閤方法,併給齣瞭任意麯線的數學解析錶達式通式。根據IEC 61000-4-2標準的相關規定,採用本方法得齣瞭理想接觸式ESD電流波形的解析錶達式,神經網絡隱含層神經元箇數選取為9時,擬閤麯線均方誤差(MSE)為4.491 7×10-4。提取本方法得到的理想接觸式ESD電流麯線的波形參數(上升時間為0.81ns,峰值電流為14.938 5A,30ns時電流值為8.038 9A,60ns時電流值為4.037 7A),證明瞭該解析式滿足IEC61000-4-2的相關規定。通過對6kV放電電壓的工程實測ESD電流波形麯線擬閤,得到工程實測ESD電流波形的解析錶達式,隱含層神經元箇數選取為20時,擬閤麯線均方誤差為0.093 5。本方法為工程實測ESD輻射場的相關計算提供瞭更準確的解析錶達式。
침대정전방전(ESD)전자맥충측시급기복사장계산저일난점문제,제출료일충기우BP(back propaga-tion)신경망락적임의곡선의합방법,병급출료임의곡선적수학해석표체식통식。근거IEC 61000-4-2표준적상관규정,채용본방법득출료이상접촉식ESD전류파형적해석표체식,신경망락은함층신경원개수선취위9시,의합곡선균방오차(MSE)위4.491 7×10-4。제취본방법득도적이상접촉식ESD전류곡선적파형삼수(상승시간위0.81ns,봉치전류위14.938 5A,30ns시전류치위8.038 9A,60ns시전류치위4.037 7A),증명료해해석식만족IEC61000-4-2적상관규정。통과대6kV방전전압적공정실측ESD전류파형곡선의합,득도공정실측ESD전류파형적해석표체식,은함층신경원개수선취위20시,의합곡선균방오차위0.093 5。본방법위공정실측ESD복사장적상관계산제공료경준학적해석표체식。
In order to improve electrostatic discharge(ESD)electromagnetic pulse tests and their calculations of electrostatic radiation field,an arbitrary curve fitting method based on back propagation(BP)neural network is presented,and a general analytical expression for any curve is given.According to IEC 61000-4-2,the analytical expression of ideal ESD current waveform in contact mode is obtained by using this method.When the number of neurons in hidden layer is 9,the waveform obtained by the expression has a mean-square error(MSE)of 4.491 7× 10-4.Parameters of ESD current waveform for the analytical expression are calculated.The first peak current of discharge is 14.938 5A,the rise time is 0.81ns,the current at 30ns is 8.038 9Aand the current at 60ns is 4.037 7Awhich prove the expression meets the requirements of IEC 61000-4-2.Furthermore,an analytical expression of the actual ESD current waveform is given based on curve fitting at 6kV discharge voltage.When the number of neurons in hidden layer is 20,the obtained waveform has a MSE of 0.093 5.Therefore,the presented method offers analytical expressions for calculations of electrostatic radiation field.