电子质量
電子質量
전자질량
ELECTRONICS QUALITY
2012年
11期
66-67
,共2页
闫洪%朱良%陈绍兰%杨祖贵
閆洪%硃良%陳紹蘭%楊祖貴
염홍%주량%진소란%양조귀
锗单晶%位错形状和密度%金相分析
鍺單晶%位錯形狀和密度%金相分析
타단정%위착형상화밀도%금상분석
Germanium single crystal%Dislocation shape and density%Metallographic examination
采用金相分析方法研究了锗单晶的位错,腐蚀试剂的选择对位错的显示有较大影响。实验表明,铁氰化钾腐蚀液能清晰地显示出锗单晶的位错,其位错腐蚀坑的形状是三角形,经过计算,锗单晶的位错密度大约为11 339根/cm2。
採用金相分析方法研究瞭鍺單晶的位錯,腐蝕試劑的選擇對位錯的顯示有較大影響。實驗錶明,鐵氰化鉀腐蝕液能清晰地顯示齣鍺單晶的位錯,其位錯腐蝕坑的形狀是三角形,經過計算,鍺單晶的位錯密度大約為11 339根/cm2。
채용금상분석방법연구료타단정적위착,부식시제적선택대위착적현시유교대영향。실험표명,철청화갑부식액능청석지현시출타단정적위착,기위착부식갱적형상시삼각형,경과계산,타단정적위착밀도대약위11 339근/cm2。
The dislocation of germanium single crystal was studied by metallographic examination method.The test indicate that the exhibition of the dislocation would be affected by corrosive agents.The exhibition of the dislocation was clear when the crystal was corroded by the potassium ferricyanide cor rosive agents.Shape of dislocation corrosive pit was triangle,The dislocation desity was 11 339root/cm2 by calculation.