电子设计工程
電子設計工程
전자설계공정
ELECTRONIC DESIGN ENGINEERING
2012年
23期
190-192
,共3页
低噪声放大器%负反馈网络%pHEMT%ADS仿真
低譟聲放大器%負反饋網絡%pHEMT%ADS倣真
저조성방대기%부반궤망락%pHEMT%ADS방진
low-noise amplifier%negative feedback network%HEMT%ADS simulation and optimization
利用pHEMT工艺设计了一个2-4GHz宽带微波单片低噪声放大器电路。本设计中采用了具有低噪声、较高关联增益、pHEMT技术设计的ATF-54143晶体管，电路采用二级级联放大的结构形式，利用微带电路实现输入输出和级间匹配．通过ADS软件提供的功能模块和优化环境对电路增益、噪声系数、驻波比、稳定系数等特性进行了研究设计。最终使得该LNA在2-4GHz波段内增益大于20dB，噪声小于1-2dB，输出电压驻波比小于2，达到了设计指标的要求。
利用pHEMT工藝設計瞭一箇2-4GHz寬帶微波單片低譟聲放大器電路。本設計中採用瞭具有低譟聲、較高關聯增益、pHEMT技術設計的ATF-54143晶體管，電路採用二級級聯放大的結構形式，利用微帶電路實現輸入輸齣和級間匹配．通過ADS軟件提供的功能模塊和優化環境對電路增益、譟聲繫數、駐波比、穩定繫數等特性進行瞭研究設計。最終使得該LNA在2-4GHz波段內增益大于20dB，譟聲小于1-2dB，輸齣電壓駐波比小于2，達到瞭設計指標的要求。
이용pHEMT공예설계료일개2-4GHz관대미파단편저조성방대기전로。본설계중채용료구유저조성、교고관련증익、pHEMT기술설계적ATF-54143정체관，전로채용이급급련방대적결구형식，이용미대전로실현수입수출화급간필배．통과ADS연건제공적공능모괴화우화배경대전로증익、조성계수、주파비、은정계수등특성진행료연구설계。최종사득해LNA재2-4GHz파단내증익대우20dB，조성소우1-2dB，수출전압주파비소우2，체도료설계지표적요구。
Based on the LNA with excellent performance from 2 GHz to 4 GHz band purpose, this design uses a low-noise, high associated gain, PHEMT technology designed ATF-54143 transistor, the circuit is presented with two cascade structureform, mierostrip circuit is used to complete the input, output and interstage matching, through the functionality modules and optimizing environment provided by ADS software, the circuit gain, noise figure, VSWR, stability factor and other characteristics are studied, ultimately from 2 GHz to 4 GHz band the LNA gain is greater than 20 dB, the noise is less than 1.2 dB, input and output VSWR is less than 2, and all factors meet the design requirements.
