硅谷
硅穀
규곡
SILICON VALLEY
2014年
9期
126-127
,共2页
辉光放电质谱法%高纯银%痕量元素%测定
輝光放電質譜法%高純銀%痕量元素%測定
휘광방전질보법%고순은%흔량원소%측정
Glowdischarge mass spectrometry%Trace element%High-purity sliver%Determination
本文报道了一种在无标准样品存在时，用辉光放电质谱仪ELEMENT GD直接且快速地测定高纯银中痕量杂质元素的方法。该方法可应用于冶金或半导体工业中高纯金属和半导体材料中痕量杂质元素的定量分析，也可提升高纯金属的痕量分析技术水平。
本文報道瞭一種在無標準樣品存在時，用輝光放電質譜儀ELEMENT GD直接且快速地測定高純銀中痕量雜質元素的方法。該方法可應用于冶金或半導體工業中高純金屬和半導體材料中痕量雜質元素的定量分析，也可提升高純金屬的痕量分析技術水平。
본문보도료일충재무표준양품존재시，용휘광방전질보의ELEMENT GD직접차쾌속지측정고순은중흔량잡질원소적방법。해방법가응용우야금혹반도체공업중고순금속화반도체재료중흔량잡질원소적정량분석，야가제승고순금속적흔량분석기술수평。
It is reported that when there are no standard smaples available ,a direct method is determinating trace e1ements in high-purity sliver by glow discharge mass spectrometer(GDMS) in this paper. Experiments show that this method has many unique advantages and can be used as a powerful trace elemental quantitative analysis of high-purity metal and semiconductor in the metallurgy and semiconductor industry.Meanwhile,it can improve technical level of high-purity metal’s trace analysis.
