长春理工大学学报(自然科学版)
長春理工大學學報(自然科學版)
장춘리공대학학보(자연과학판)
JOURNAL OF CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY(NATURAL SCIENCE EDITION)
2013年
3期
1-4
,共4页
张丽超%高欣%薄报学%李抒智
張麗超%高訢%薄報學%李抒智
장려초%고흔%박보학%리서지
高压芯片%GaN%HV LED%加速老化%失效
高壓芯片%GaN%HV LED%加速老化%失效
고압심편%GaN%HV LED%가속노화%실효
high-voltage chips%GaN%HV LED%accelerated aging%failure
在120℃的环境温度下,对两组GaN基白光高压发光二极管(HV LED)进行了电流对比加速老化实验。实验中,分别向两组HV LED通入20mA和30mA的恒流电流,通过其老化前后光色电性能参数、I-V曲线以及光照度的变化,分析老化的内在机理;根据样品在不同波段的光谱能量变化及其比值,找出LED老化中主要的影响因素。研究结果表明,随着老化时间的增加,芯片电极的欧姆接触退化,以及芯片材料中的缺陷增多,使HV LED电极脱落、芯片发生严重断裂,从而导致芯片老化失效。
在120℃的環境溫度下,對兩組GaN基白光高壓髮光二極管(HV LED)進行瞭電流對比加速老化實驗。實驗中,分彆嚮兩組HV LED通入20mA和30mA的恆流電流,通過其老化前後光色電性能參數、I-V麯線以及光照度的變化,分析老化的內在機理;根據樣品在不同波段的光譜能量變化及其比值,找齣LED老化中主要的影響因素。研究結果錶明,隨著老化時間的增加,芯片電極的歐姆接觸退化,以及芯片材料中的缺陷增多,使HV LED電極脫落、芯片髮生嚴重斷裂,從而導緻芯片老化失效。
재120℃적배경온도하,대량조GaN기백광고압발광이겁관(HV LED)진행료전류대비가속노화실험。실험중,분별향량조HV LED통입20mA화30mA적항류전류,통과기노화전후광색전성능삼수、I-V곡선이급광조도적변화,분석노화적내재궤리;근거양품재불동파단적광보능량변화급기비치,조출LED노화중주요적영향인소。연구결과표명,수착노화시간적증가,심편전겁적구모접촉퇴화,이급심편재료중적결함증다,사HV LED전겁탈락、심편발생엄중단렬,종이도치심편노화실효。
The current accelerated test was carried on two group of GaN white high-voltage light emitting diode (HV LED), two groups of high voltage LED was biased respectively with current of 20mA, 30mA at the environmental temperature of 120℃, to determine its aging and analyze the internal mechanism of aging through the comparison of the electrical properties parameters of various light color before and after the aging. The major influence factor on LED aging has been obtained according to spectrum energy change and its ratio of the sample in different bands. The re-search results show that the high temperature make the HV LED electrode fall off, chips break seriously which leads to the aging failure of chips.