CAJ | 학술논문

　　将甲基丙烯酸丁酯（BMA）与聚醚酰亚胺（PEI）溶液混合，通过自由基聚合得到聚甲基丙烯酸丁酯/聚醚酰亚胺共混高分子体系(PBMA/PEI)；将PBMA/PEI作为有机功能层制备三明治结构的阻变存储器件ITO/（PBMA/PEI）/Ag，对PBMA/PEI进行结构表征，分析其热性能和ITO/（PBMA/PEI）/Ag的阻变性能。结果表明：制备的PBMA/PEI具有良好的耐热性能，其初始分解温度为250℃；制备的阻变存储器件具有较好的阻变存储特性，即较高的电流开关比(106)、较低的跳变电压(1.8 V)、较低的开态电流(约为10-4 A)。
　　장갑기병희산정지（BMA）여취미선아알（PEI）용액혼합，통과자유기취합득도취갑기병희산정지/취미선아알공혼고분자체계(PBMA/PEI)；장PBMA/PEI작위유궤공능층제비삼명치결구적조변존저기건ITO/（PBMA/PEI）/Ag，대PBMA/PEI진행결구표정，분석기열성능화ITO/（PBMA/PEI）/Ag적조변성능。결과표명：제비적PBMA/PEI구유량호적내열성능，기초시분해온도위250℃；제비적조변존저기건구유교호적조변존저특성，즉교고적전류개관비(106)、교저적도변전압(1.8 V)、교저적개태전류(약위10-4 A)。
A poly(butyl methacrylate)(PBMA)/polyetherimide(PEI) blending polymer was synthesized by rad-ical polymerization from butyl methacrylate(BMA) and polyetherimide solution, and a sandwich structure resistive random access memory ITO/(PBMA/PEI)/Ag was prepared using PBMA/PEI as organic function layer. The structure of the PBMA/PEI was characterized and the heat-resistance and resistive switching characteristics of the ITO/(PBMA/PEI)/Ag were studied. The results show that the PBMA/PEI has good heat-resistance, with the initial decomposition temperature of 250℃. The resistive random access memory has good resistive switching characteristics, that means higher Ion/Ioff ratio(106), lower switching threshold voltage (1.8 V) and lower on-current (about 10-4 A).