CAJ | 학술논문

采用溶胶-凝胶旋转涂膜法,以 InCl3·4H 2 O 和 SnCl4·5 H 2 O 为前驱物在玻璃基片上制备了氧化铟锡(ITO)薄膜材料,研究掺锡浓度、涂膜层数、热处理温度和热处理时间等工艺条件对 ITO 薄膜光电特性的影响.实验结果表明,ITO 薄膜的方块电阻和可见光透射率都与掺锡浓度、涂膜层数、热处理温度和时间等因素有关,最佳参数为锡掺杂量12wt%,热处理温度和时间分别为450℃和1 h,薄膜层数为6层.最佳 ITO 薄膜的方块电阻为185Ω/□,可见光平均透射率为91.25%.
채용용효-응효선전도막법,이 InCl3·4H 2 O 화 SnCl4·5 H 2 O 위전구물재파리기편상제비료양화인석(ITO)박막재료,연구참석농도、도막층수、열처리온도화열처리시간등공예조건대 ITO 박막광전특성적영향.실험결과표명,ITO 박막적방괴전조화가견광투사솔도여참석농도、도막층수、열처리온도화시간등인소유관,최가삼수위석참잡량12wt%,열처리온도화시간분별위450℃화1 h,박막층수위6층.최가 ITO 박막적방괴전조위185Ω/□,가견광평균투사솔위91.25%.
The Sn doped In2 O 3 thin films were prepared on the glass substrates by sol-gel and rotating film method with InCl3 ·4H 2 O and SnCl4 ·5 H 2 O.The effects of blending tin concentration coating layer, heat-treatment temperature and time on the optical and electrical properties of ITO thin films were investigated.The experimental results show that the square resistance and the transmission rate of ITO thin film are related to the blending tin concentration,coating layer,heat-treatment temperature and time. And the best blending tin concentration is 12wt%,heat treatment temperature and time are 450 ℃ and 60 min,the coating layer is 6,respectively.The square resistance of ITO thin film is 185Ω/□and the transmission rate is 91.25%.