CAJ | 학술논문

以碳化硅(SiC)和Ⅲ族氮化物为代表的宽禁带半导体是近年来国内外重点研究和发展的新型第三代半导体材料，具有禁带宽度大、导热性能好、电子饱和漂移速度高以及化学稳定性优等特点，用于工作于紫外波段的光探测器件具有显著的材料性能优势。宽禁带半导体紫外探测器的主要应用包括：国防预警、环境监测、化工和生化反应的光谱分析和过程检测、以及天文研究等。本文主要回顾近年来南京大学在此方面开展的一些代表工作，所涉及到的典型器件有：具有极低暗电流的 AlGaN基日盲 MSM紫外探测器、高量子效率 AlGaN基日盲雪崩光电探测器、以及 SiC基可见光盲紫外单光子探测器。
이탄화규(SiC)화Ⅲ족담화물위대표적관금대반도체시근년래국내외중점연구화발전적신형제삼대반도체재료，구유금대관도대、도열성능호、전자포화표이속도고이급화학은정성우등특점，용우공작우자외파단적광탐측기건구유현저적재료성능우세。관금대반도체자외탐측기적주요응용포괄：국방예경、배경감측、화공화생화반응적광보분석화과정검측、이급천문연구등。본문주요회고근년래남경대학재차방면개전적일사대표공작，소섭급도적전형기건유：구유겁저암전류적 AlGaN기일맹 MSM자외탐측기、고양자효솔 AlGaN기일맹설붕광전탐측기、이급 SiC기가견광맹자외단광자탐측기。
Wide-bandgap semiconductors,such as group-Ⅲ nitrides and SiC have recently attracted much attention in ultraviolet(UV)photodetector applications due to their large bandgap energy,high electron saturation velocity, superior radiation hardness,and high temperature resistance.Such photodetectors have a variety of potential applications including missile flame detection,environmental monitoring,chemical/biological agent detection,and solar physics.In this paper,some of our recent works on design and fabrication of UV photodetectors based on Ⅲ-nitride and SiC semiconductors are reviewed.These related devices include:AlGaN-based MSM solar-blind photodetectors with ultra-low dark current,AlGaN-based solar-blind avalanche photodiodes with high quantum efficiency,and SiC-based visible-bind avalanche photodiodes with single photon counting capability.