航空制造技术
航空製造技術
항공제조기술
AERONAUTICAL MANUFACTURING TECHNOLOGY
2013年
23期
92-96
,共5页
热塑性树脂基复合材料%层压板%聚芳醚树脂%高温性能%二氮杂萘酮
熱塑性樹脂基複閤材料%層壓闆%聚芳醚樹脂%高溫性能%二氮雜萘酮
열소성수지기복합재료%층압판%취방미수지%고온성능%이담잡내동
Thermoplastic resin matrix composites%Laminate%Pol-yarylenters%High temperature proper-ties%Phthalazione
将耐高温可溶解的杂萘联苯共聚芳醚砜(PPBES)与聚芳醚腈酮(PPENK)共混,采用溶液浸渍法制备了玻纤布增强PPBES/PPENK树脂基层压板。研究了树脂的相容性及树脂配比以及共混树脂含量对PPBES/PPENK层压板的室温及150℃弯曲强度、吸水率的影响,对层压板的介电性能、阻燃性能等进行了测试。结果表明:PPBES与PPENK完全相容。当PPBES/PPENK=4/6(质量比),树脂含量为35.4%时,层压板的综合性能最佳,且150℃的弯曲强度保持率为90.4%。在1MHz下,介电常数为3.5,tanδ为0.0037;在DC500V下,体积电阻率为5.9×1013Ω· m;阻燃性能达到V-0级。
將耐高溫可溶解的雜萘聯苯共聚芳醚砜(PPBES)與聚芳醚腈酮(PPENK)共混,採用溶液浸漬法製備瞭玻纖佈增彊PPBES/PPENK樹脂基層壓闆。研究瞭樹脂的相容性及樹脂配比以及共混樹脂含量對PPBES/PPENK層壓闆的室溫及150℃彎麯彊度、吸水率的影響,對層壓闆的介電性能、阻燃性能等進行瞭測試。結果錶明:PPBES與PPENK完全相容。噹PPBES/PPENK=4/6(質量比),樹脂含量為35.4%時,層壓闆的綜閤性能最佳,且150℃的彎麯彊度保持率為90.4%。在1MHz下,介電常數為3.5,tanδ為0.0037;在DC500V下,體積電阻率為5.9×1013Ω· m;阻燃性能達到V-0級。
장내고온가용해적잡내련분공취방미풍(PPBES)여취방미정동(PPENK)공혼,채용용액침지법제비료파섬포증강PPBES/PPENK수지기층압판。연구료수지적상용성급수지배비이급공혼수지함량대PPBES/PPENK층압판적실온급150℃만곡강도、흡수솔적영향,대층압판적개전성능、조연성능등진행료측시。결과표명:PPBES여PPENK완전상용。당PPBES/PPENK=4/6(질량비),수지함량위35.4%시,층압판적종합성능최가,차150℃적만곡강도보지솔위90.4%。재1MHz하,개전상수위3.5,tanδ위0.0037;재DC500V하,체적전조솔위5.9×1013Ω· m;조연성능체도V-0급。
The PPBES/PPENK laminate is prepared through the blend of poly(phthalazinone biphe-nylene ether sulfone) (PPBES) and poly(phthalazinone ether nitrile ketone) (PPENK) which have thermostabil-ity and reasonable solubility by solution dipping process. The compatibility and ratio of resins are discussed. The effects of PPBES/PPENK resin content on the flexural strength at 25℃and 150℃, respectively, and water abso-rption of the laminate are studied. The dielectric properties and lfame retardancy of the laminate are tested. The SEM result approves that PPBES and PPENK are fully compat-ible. The results show that the laminate has optimum comprehensive performance when the blending resin with the ratio of PPBES/PPENK=4/6 content is 35.4%. Under condition of 1MHz, the dielectric constant and dielectric loss are 3.5 and 0.0037, respectively. The volume resistiv-ity is 5.9×1013Ω·m at DC500V. Its lfame retardant property rate is UL94-V0.