CAJ | 학술논문

采用脉冲激光沉积（PLD）方法，在钠钙玻璃上沉积不同 Ga 含量的CuIn (1-x)GaxSe2薄膜，研究不同Ga含量对CIGS薄膜结构及光学特性的影响。研究表明：随着 Ga含量增加， CIGS薄膜的光学带隙增大。优选特性较好的CIGS沉积在同一个钠钙玻璃衬底上，使 Ga/( In+Ga )比在薄膜内纵深方向呈先减小后增加的变化。采用 XPS逐层刻蚀分析薄膜的元素组成，利用带隙近似公式得到能带随深度变化情况，最终得到结构、光学特性和电学特性较好的双梯度带隙结构薄膜。
채용맥충격광침적（PLD）방법，재납개파리상침적불동 Ga 함량적CuIn (1-x)GaxSe2박막，연구불동Ga함량대CIGS박막결구급광학특성적영향。연구표명：수착 Ga함량증가， CIGS박막적광학대극증대。우선특성교호적CIGS침적재동일개납개파리츤저상，사 Ga/( In+Ga )비재박막내종심방향정선감소후증가적변화。채용 XPS축층각식분석박막적원소조성，이용대극근사공식득도능대수심도변화정황，최종득도결구、광학특성화전학특성교호적쌍제도대극결구박막。
The CuIn (1-x)GaxSe2 thin films with different Ga contents were deposited on the soda lime glass by pulsed laser deposition method . The influence of different Ga contents on the films structure and optical properties were studied . The results show that: the optical band gap of the CIGS thin films increase with increasing the Ga contents . Then the CIGS films with good characteristics were sequentially deposited on the same soda lime glass . The elements of thin film were studied with XPS etching layer-by-layer , and the variation of band gap in the depth direction was calculated by the band gap approximate formula . Finally , double-graded band gap thin films with good structure , optical and electrical characteristics were obtained .