真空
真空
진공
VACUUM
2014年
1期
29-32
,共4页
彭鸿雁%姜宏伟%尹龙承%黄海亮%王丹%陈玉强
彭鴻雁%薑宏偉%尹龍承%黃海亮%王丹%陳玉彊
팽홍안%강굉위%윤룡승%황해량%왕단%진옥강
直流热阴极%PCVD%间歇生长模式%透明金刚石膜
直流熱陰極%PCVD%間歇生長模式%透明金剛石膜
직류열음겁%PCVD%간헐생장모식%투명금강석막
DC hot-cathode%PCVD%intermittent deposition mode%transparent diamond films
采用直流热阴极等离子体化学气相沉积（直流热阴极 PCVD）方法，通过金刚石膜的间歇生长过程，引入氮原子的作用，实现对非金刚石成份的刻蚀和金刚石膜的择优取向生长，在 CH4：N2：H2气氛下制备透明金刚石膜。金刚石膜的间歇式生长分为沉积阶段和刻蚀两个阶段，沉积阶段为20 min ，刻蚀阶段为1 min ，沉积和刻蚀通过温度的调节来实现，总的生长时间10 h；实验中主要改变的参数是 N2气比例，将N2气流量与总气体流量的比例分为高、中、低三档分别进行实验。结果在 CH4：N2：H2比例为2：20：180时获得了透明金刚石膜。金刚石膜样品用 Raman 光谱仪、SEM 和 XRD 进行了表征，研究表明，直流热阴极PCVD间歇生长模式下，通过引入氮原子的作用，可以制备出（111）面取向的透明金刚石膜。
採用直流熱陰極等離子體化學氣相沉積（直流熱陰極 PCVD）方法，通過金剛石膜的間歇生長過程，引入氮原子的作用，實現對非金剛石成份的刻蝕和金剛石膜的擇優取嚮生長，在 CH4：N2：H2氣氛下製備透明金剛石膜。金剛石膜的間歇式生長分為沉積階段和刻蝕兩箇階段，沉積階段為20 min ，刻蝕階段為1 min ，沉積和刻蝕通過溫度的調節來實現，總的生長時間10 h；實驗中主要改變的參數是 N2氣比例，將N2氣流量與總氣體流量的比例分為高、中、低三檔分彆進行實驗。結果在 CH4：N2：H2比例為2：20：180時穫得瞭透明金剛石膜。金剛石膜樣品用 Raman 光譜儀、SEM 和 XRD 進行瞭錶徵，研究錶明，直流熱陰極PCVD間歇生長模式下，通過引入氮原子的作用，可以製備齣（111）麵取嚮的透明金剛石膜。
채용직류열음겁등리자체화학기상침적（직류열음겁 PCVD）방법，통과금강석막적간헐생장과정，인입담원자적작용，실현대비금강석성빈적각식화금강석막적택우취향생장，재 CH4：N2：H2기분하제비투명금강석막。금강석막적간헐식생장분위침적계단화각식량개계단，침적계단위20 min ，각식계단위1 min ，침적화각식통과온도적조절래실현，총적생장시간10 h；실험중주요개변적삼수시 N2기비례，장N2기류량여총기체류량적비례분위고、중、저삼당분별진행실험。결과재 CH4：N2：H2비례위2：20：180시획득료투명금강석막。금강석막양품용 Raman 광보의、SEM 화 XRD 진행료표정，연구표명，직류열음겁PCVD간헐생장모식하，통과인입담원자적작용，가이제비출（111）면취향적투명금강석막。
The intermittent growing mode is a new procedure of preparing diamond film by DC hot-cathode plasma CVD (chemical vapor deposition). In this way, transparent diamond films were prepared by adding nitrogen in CH4-H2 gas mixture. Because the nitrogen atom is benefit of etching and selective growth by the intermittent mode , the non-diamond phases could be etched and selective growth of diamond film could be done . Growth process of diamond film is divided into two steps , first step is deposition process , and another one is etching process , it alternates between the two process . 20 minutes were used for deposition and 1 minute for etching . For comparing , another diamond film sample was prepared using DC hot-cathode plasma CVD continuous mode in the same growth conditions. We have studied the influence of nitrogen addition in CH4/H2 gas mixtures by changing the flow ratio of nitrogen , the results showed that the transparent diamond films were obtained only at CH4:N2:H2=2:20:180 . Scanning electron microscope ( SEM ) , Raman spectroscopy , and X-ray diffraction ( XRD ) analysis were used to characterize the surface morphology , crystalline texture and structure . The results revealed that in the intermittent growing mode , using the action of nitrogen atom , the ( 111 ) oriented transparent diamond films could be prepared .
