CAJ | 학술논문

采用光悬浮区熔法以3 mm/h 的生长速度制备 Gd2PdSi3单晶。该化合物表现为同成分熔融，其熔点在1700°C 左右。与Gd2PdSi3化学计量成分相比，制备的晶体中Pd含量略低，导致了熔区内Pd的富集以及实验过程中熔区温度的降低。采用标准成分给料棒制备的单晶内含有少量定向的 GdSi 沉淀，可以通过退火热处理减少其含量但并不能完全消除。采用给料棒成分微调的方法制备出不含GdSi沉淀的高质量Gd2PdSi3单晶。
채용광현부구용법이3 mm/h 적생장속도제비 Gd2PdSi3단정。해화합물표현위동성분용융，기용점재1700°C 좌우。여Gd2PdSi3화학계량성분상비，제비적정체중Pd함량략저，도치료용구내Pd적부집이급실험과정중용구온도적강저。채용표준성분급료봉제비적단정내함유소량정향적 GdSi 침정，가이통과퇴화열처리감소기함량단병불능완전소제。채용급료봉성분미조적방법제비출불함GdSi침정적고질량Gd2PdSi3단정。
Gd2PdSi3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. The compound exhibited congruent melting behavior at a liquidus temperature of about 1700 °C. The slightly Pd-depleted composition of the crystal, with respect to the nominal Gd2PdSi3 stoichiometry, led to gradual accumulation of Pd in the traveling zone and to a decreasing operating temperature during the growth process. Thin platelet-like precipitates of a GdSi phase were detected in the stoichiometric feed rod growth crystal matrix which can be reduced by annealing treatment. Feed rod composition shift crystal growth was proved to be a better way of getting high quality of Gd2PdSi3 single crystal.