CAJ | 학술논문

一些DMOS产品的Vfsd上限要求做得很低，这样背金工艺的窗口就非常窄、经常发生Vfsd超上限的事件。如何拓宽背金工艺窗口、满足特殊DMOS产品对Vfsd的苛刻要求，在此研究了背面减薄、背面硅腐蚀和背面注入的主要工艺关键参数对Vfsd的影响。比较减薄机研磨轮目数后发现，研磨轮目数决定背面粗糙度，进而影响背面SI与背面金属的接触电阻和Vfsd；比较硅腐蚀有、无活性剂后发现，加了活性剂的背面硅腐蚀速率温和、均匀性好，可减缓切入式减薄机的Vfsd扇形分布、Vfsd均匀性明显改善。背注能量拉偏后发现，降低背注能量可降低Vfsd的Mean值。综合以上机理分析和实验结果，找到了背面最佳工艺条件，大大拓宽了背金工艺窗口。在最佳背面工艺条件下，这些特殊的DMOS产品Vfsd超上限几率从1.5%下降到0.1%以下、良率平均上升4%，此背金最佳工艺可以成为DMOS生产的标准工艺。
일사DMOS산품적Vfsd상한요구주득흔저，저양배금공예적창구취비상착、경상발생Vfsd초상한적사건。여하탁관배금공예창구、만족특수DMOS산품대Vfsd적가각요구，재차연구료배면감박、배면규부식화배면주입적주요공예관건삼수대Vfsd적영향。비교감박궤연마륜목수후발현，연마륜목수결정배면조조도，진이영향배면SI여배면금속적접촉전조화Vfsd；비교규부식유、무활성제후발현，가료활성제적배면규부식속솔온화、균균성호，가감완절입식감박궤적Vfsd선형분포、Vfsd균균성명현개선。배주능량랍편후발현，강저배주능량가강저Vfsd적Mean치。종합이상궤리분석화실험결과，조도료배면최가공예조건，대대탁관료배금공예창구。재최가배면공예조건하，저사특수적DMOS산품Vfsd초상한궤솔종1.5%하강도0.1%이하、량솔평균상승4%，차배금최가공예가이성위DMOS생산적표준공예。
Since some special DMOS products require very low Vfsd′s upper limit,the window of backside process be-comes very narrow and the phenomenon of Vfsd upper limit happens quite often. To widen the window of backside process and satisfy the Vfsd requirement of special DMOS products,the influence of key parameters of main processes of backside grinding, backside Si wet etching and backside injection on Vfsd value is studied. According to the comparison result of backside grinding wheels with different mesh numbers,it is found that the mesh number of grinding wheel affects the roughness on the backside greatly,as well as the contact resistance between backside Si and backside metal. After comparing Si wet etching with and without active agent,it is found that surfactants’injection can slow down Vfsd’s sector distribution and improve Vfsd uniformity obviously. To lowing down the backside injection energy can reduce Vfsd’s Mean value. BKM conditions of backside process were found out from the mechanism analysis and experiments results. Under BKM condition,special DMOS products’s Vfsd ul-tralimit rate reduced from 1.5% to current 0.1% and CP yield increased 4%. This BKM process can be applied as standard pro-cess of DMOS production.