科技创新导报
科技創新導報
과기창신도보
SCIENCE AND TECHNOLOGY CONSULTING HERALD
2012年
32期
13-15,17
,共4页
氮化硅薄膜%透过率%PECVD
氮化硅薄膜%透過率%PECVD
담화규박막%투과솔%PECVD
silicon nitride thin films transmittance PECVD
研究了用PECVD薄膜沉积设备制作氮化硅薄膜的透过率。通过改变沉积工艺参数,研究了沉积温度、射频功率、SiH4流量和腔体压强对薄膜透过率曲线的影响,并分析影响原因。
研究瞭用PECVD薄膜沉積設備製作氮化硅薄膜的透過率。通過改變沉積工藝參數,研究瞭沉積溫度、射頻功率、SiH4流量和腔體壓彊對薄膜透過率麯線的影響,併分析影響原因。
연구료용PECVD박막침적설비제작담화규박막적투과솔。통과개변침적공예삼수,연구료침적온도、사빈공솔、SiH4류량화강체압강대박막투과솔곡선적영향,병분석영향원인。
The transmittance on silicon nitride thin films that were fabricated by PECVD are studied in this paper.A serial of detailed experiment s are carried out, which mainly studied how the processing parameters-deposit temperature, RF power, flow of SiH4 and Chamber pressure - influence the transmittance of silicon nitride films, and analysis the reason.
