电子工业专用设备
電子工業專用設備
전자공업전용설비
EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING
2014年
4期
42-45
,共4页
薄膜电路%通孔%光刻胶%喷涂
薄膜電路%通孔%光刻膠%噴塗
박막전로%통공%광각효%분도
T hin film circuits%T hrough via%Photoresist%Spray coating
采用经稀释的光刻胶在喷胶机上对打孔的基片进行了雾化喷涂试验，在通孔结构表面实现了光刻胶的均匀涂覆。在同一基片上选取了十个通孔，采用扫面电镜对基片表面、通孔边缘及通孔侧壁中部和底部四处的光刻胶厚度进行了测量，得到的平均膜厚分别为10.2、8.8、6.1和5.3μm ，各处厚度均匀性均小于±10%。
採用經稀釋的光刻膠在噴膠機上對打孔的基片進行瞭霧化噴塗試驗，在通孔結構錶麵實現瞭光刻膠的均勻塗覆。在同一基片上選取瞭十箇通孔，採用掃麵電鏡對基片錶麵、通孔邊緣及通孔側壁中部和底部四處的光刻膠厚度進行瞭測量，得到的平均膜厚分彆為10.2、8.8、6.1和5.3μm ，各處厚度均勻性均小于±10%。
채용경희석적광각효재분효궤상대타공적기편진행료무화분도시험，재통공결구표면실현료광각효적균균도복。재동일기편상선취료십개통공，채용소면전경대기편표면、통공변연급통공측벽중부화저부사처적광각효후도진행료측량，득도적평균막후분별위10.2、8.8、6.1화5.3μm ，각처후도균균성균소우±10%。
The diluted photoresist was applied in spray coating process on drilled substrate using a spray coating equipm ent. The conform al coating of photoresist layer on through via structure was achieved. Ten through via on the sam e substrate were selected. For each through via,the photoresist layer thickness of substrate surface,through via edge,sidewall center and sidewall bottom were m easured respectively by H ITACHI Scanning E lectron Microscope. The average value of film thickness were 10.2,8.8,6.1 and 5.3μm ,and allthickness uniform ity was less than ±10% .
