CAJ | 학술논문

　　研究了栅氧厚度对反熔丝PROM中存储单元性能的影响。通过改变仿真模型中栅氧层的厚度，研究了存储单元的击穿电阻等的性能的变化趋势。仿真结果表明，栅氧厚度减薄可有效提升存储单元的读取速度，但会降低晶体管的可靠性和使用寿命。
　　연구료책양후도대반용사PROM중존저단원성능적영향。통과개변방진모형중책양층적후도，연구료존저단원적격천전조등적성능적변화추세。방진결과표명，책양후도감박가유효제승존저단원적독취속도，단회강저정체관적가고성화사용수명。
This paper analyzed the effects of the gate-oxide’s thickness on the performance of the memory cell in anti-fuse PROMs. By changing the gate-oxide’s thickness of simulation model, the performance trends of the storage unit was studied, for example the breakdown resistance .The studies showed that thinning the thickness of gate-oxide could effec-tively enhance the reading speed of the memory cell, but would reduce the reliability of the MOSFET.