CAJ | 학술논문

MOS （Matel-Oxide-Semiconductor ）器件阈值电压提取过程中的一些求导运算放大了测量数据中所包含的涨落因素（噪声和测量错误），使阈值电压提取过程变得不稳定。本文采用Savitzky-Golay低通滤波算法，求导运算和滤波过程同时进行，有效地抑制了测量数据中的涨落。再结合目标曲线峰值附近局域匹配系数判据，阈值电压提取过程就可以稳定且自动地完成，这为MOSFET （MOS Field-Effect Transistor ）特性分析及集成电路设计工作带来很大方便。
MOS （Matel-Oxide-Semiconductor ）기건역치전압제취과정중적일사구도운산방대료측량수거중소포함적창락인소（조성화측량착오），사역치전압제취과정변득불은정。본문채용Savitzky-Golay저통려파산법，구도운산화려파과정동시진행，유효지억제료측량수거중적창락。재결합목표곡선봉치부근국역필배계수판거，역치전압제취과정취가이은정차자동지완성，저위MOSFET （MOS Field-Effect Transistor ）특성분석급집성전로설계공작대래흔대방편。
Originally from the noise and errors in measurement ,the fluctuations make the extraction of MOSFET’s threshold voltage unstable ,which will become worse in the case of the derivation operation .We proposed that the Savitzky-Golay filtering al-gorithm could be introduced into the derivation process in order to alleviate the influence of fluctuations effectively .A criterion for assessing the goodness of filtering was presented ,and then the extraction of threshold voltage of MOSFET could be achieved stably and automatically ,which will be in favor of the characterizing MOS devices and designing integrated circuits .