CAJ | 학술논문

本文用特征函数将因氧化层和空间电荷区衔接条件得到的恒等式作正交展开，把未知量求解转化成一组线性代数方程，得到了二维电势解析表达式，并给出了电势能极值点的计算方法。模型的优点是精度与数值解的精度相同，不含适配参数、运算量小、避免了数值分析时的方程离散化，可直接用于电路模拟程序。文中讨论了亚阈值下NMOSFET的电势分布、阈值电压和界面态电荷的影响。结果表明，该模型与MEDICI结果极其吻合。
본문용특정함수장인양화층화공간전하구함접조건득도적항등식작정교전개，파미지량구해전화성일조선성대수방정，득도료이유전세해석표체식，병급출료전세능겁치점적계산방법。모형적우점시정도여수치해적정도상동，불함괄배삼수、운산량소、피면료수치분석시적방정리산화，가직접용우전로모의정서。문중토론료아역치하NMOSFET적전세분포、역치전압화계면태전하적영향。결과표명，해모형여MEDICI결과겁기문합。
A 2-D potential analytical solution in the oxide layer and space charge region is derived .The unknowns are able to be solved by a group of linear equation ,which is orthogonal expanded from the connected condition identity of oxide layer and space charge region .The solution of potential extreme point is also presented .There are many advantages of small calculating amount , without any compromise in accuracy and adapter parameters .Moreover ,this model can be directly used in circuit simulation .The potential distributions and threshold voltage of NMOSFET have been derived in subthreshold .Excellent agreement with MEDICI has been observed .