CAJ | 학술논문

@@@@ZnO薄膜是以Si作为基底，利用射频磁控溅射和高温度退火技术制备而成的。分析ZnO薄膜结构特征时，使用X射线衍射显示ZnO薄膜具有高度的C轴择优取向；用电子显微镜扫描样品，表面光洁、平整。在制备ZnO薄膜工艺条件下，在石英玻璃基底上制备Al/ZnO/Ag肖特基二极管紫外探测器。对该器件进行电流测试显示：在室温下，Ag与ZnO已经形成肖特基接触，Al/ZnO/Ag肖特基二极管探测器具有明显的光电响应特性。
@@@@ZnO박막시이Si작위기저，이용사빈자공천사화고온도퇴화기술제비이성적。분석ZnO박막결구특정시，사용X사선연사현시ZnO박막구유고도적C축택우취향；용전자현미경소묘양품，표면광길、평정。재제비ZnO박막공예조건하，재석영파리기저상제비Al/ZnO/Ag초특기이겁관자외탐측기。대해기건진행전류측시현시：재실온하，Ag여ZnO이경형성초특기접촉，Al/ZnO/Ag초특기이겁관탐측기구유명현적광전향응특성。
ZnO thin film is prepared by RF magnetron sputtering and high temperature annealing process on the substate of Si . By analying the structure characteristics of ZnO thin film, the result shows that ZnO thin film is C-axis oriented using X-ray diffraction and the surface of sample is clean and smooth using scanning electron microscopy. It is prepared Al/ZnO/Ag Schottky diode under the conditions of the technology in prepareing ZnO thin film. The device is tested at room temperature .The result shows that schottky contact is formed between Ag and ZnO, Al/ZnO/Ag schottky diode has a significantly light respon.