CAJ | 학술논문

　　通过物理气相传输（PVT）法成功地生长出直径大于7.62 cm的掺钒半绝缘4H-SiC晶体。抛光后的掺钒半绝缘4H-SiC晶片在真空且温度1600℃～2000℃条件下进行退火处理，利用高分辨 X-ray 衍射仪、显微拉曼光谱仪、非接触电阻率测试仪和应力仪对退火前后的晶片进行了测试与分析，研究了退火工艺对掺钒半绝缘4H-SiC晶片应力的影响，并且得到了合适的退火工艺。结果表明：合适的退火处理有利于进一步提高晶片的质量。
　　통과물리기상전수（PVT）법성공지생장출직경대우7.62 cm적참범반절연4H-SiC정체。포광후적참범반절연4H-SiC정편재진공차온도1600℃～2000℃조건하진행퇴화처리，이용고분변 X-ray 연사의、현미랍만광보의、비접촉전조솔측시의화응력의대퇴화전후적정편진행료측시여분석，연구료퇴화공예대참범반절연4H-SiC정편응력적영향，병차득도료합괄적퇴화공예。결과표명：합괄적퇴화처리유리우진일보제고정편적질량。
7.62 cm vanadium-doped semi-insulating (DVSI) 4H-SiC single crystal is prepared successfully by physical vapor transport (PVT) method. The wafes of 4H-SiC crystal were annealed at the temperature ranges between 1 600 ℃and 2 000 ℃. After annealing, COREMA (Contactless Resistivity Mapping) , HR-XRD (High resolution X-ray diffraction) and MRSM(Microscope Raman Spectra Mapping) tests are carried out, with annealing treatment, it implies that other growth defects such as polytype inclusions, stress and micropipes will be reduced following the annealing and 4H-SiC crystalline quality will be improved.