CAJ | 학술논문

随着集成电路制造工艺的不断进步，沟道长度、结深、栅氧厚度等特征尺寸不断减小，而电路的电源电压没有按比例减小，易造成MOSFET的电流-电压特性退化，需要提前在设计阶段加以考虑。对电路长期可靠性问题中的热载流子效应（HCI）进行了仿真研究。
수착집성전로제조공예적불단진보，구도장도、결심、책양후도등특정척촌불단감소，이전로적전원전압몰유안비례감소，역조성MOSFET적전류-전압특성퇴화，수요제전재설계계단가이고필。대전로장기가고성문제중적열재류자효응（HCI）진행료방진연구。
As VLSI fabrication technologies move into the deep submicron regime, feature size such as the channel length, the junction depth and the gate oxide thickness, is reducing without proportional scaling of the power supply voltage. This degrades the current-voltage characteristics of the MOSFET. The paper presents a investagation of circuit-level HCI simulation.