CAJ | 학술논문

　　采用射频磁控溅射技术用单晶 Si（111）和载玻片制备了 SiO2薄膜。对薄膜进行了不同温度的退火处理。利用 X射线衍射仪，紫外－可见分光光度计和傅里叶变换红外光谱仪等测试不同退火温度下 SiO2薄膜的微结构、透反射曲线和红外吸收谱。研究表明：退火后 SiO2薄膜仍为四方结构，薄膜的平均晶粒尺寸随退火温度的升高逐渐增大，晶格常数与标准值相比均稍小。退火温度对薄膜平均反射率影响不明显；薄膜平均透射率随退火温度的升高先增大后减小。
　　채용사빈자공천사기술용단정 Si（111）화재파편제비료 SiO2박막。대박막진행료불동온도적퇴화처리。이용 X사선연사의，자외－가견분광광도계화부리협변환홍외광보의등측시불동퇴화온도하 SiO2박막적미결구、투반사곡선화홍외흡수보。연구표명：퇴화후 SiO2박막잉위사방결구，박막적평균정립척촌수퇴화온도적승고축점증대，정격상수여표준치상비균초소。퇴화온도대박막평균반사솔영향불명현；박막평균투사솔수퇴화온도적승고선증대후감소。
SiO2 thin films with different annealing temperature were prepared by RF magnetron sputte-ring .By using X - ray diffractometer ,UV - Vis spectrophotometer ,and Fourier transform infrared spectrometer ,the microstructure ,UV - Vis spectra and infrared absorption spectra of the thin films were tested .The results showed that the thin films remained the tetragonal structure after annealing . The average grain size of thin films and the lattice constant were smaller than the standard values with annealing temperature increasing .The average reflectivity of the thin films did not affect significantly by annealing temperature ;the average transmission of films with the annealing temperature increased at first and then decreased .