粉末冶金材料科学与工程
粉末冶金材料科學與工程
분말야금재료과학여공정
POWDER METALLURGY MATERIALS SCIENCE AND ENGINEERING
2013年
3期
315-319
,共5页
李树杰%张岚%陈孝飞%刘文慧%席文君
李樹傑%張嵐%陳孝飛%劉文慧%席文君
리수걸%장람%진효비%류문혜%석문군
陶瓷先驱体%聚硅氧烷%交联%裂解
陶瓷先驅體%聚硅氧烷%交聯%裂解
도자선구체%취규양완%교련%렬해
preceramic polymer%polysiloxane%crosslinking%pyrolysis
陶瓷及陶瓷基复合材料的连接技术具有重要的工程意义。鉴于采用以含氢聚硅氧烷(HPSO)和含乙烯基聚硅氧烷(VPSO)的混合物(用 HPSO-VPSO 表示)为主要成分的连接剂能够有效地连接 SiC 陶瓷,采用热重法(TG)、差热扫描量热法(DSC)、红外光谱(IR)以及 X 射线衍射(XRD)研究 HPSO-VPSO 体系的交联和裂解过程。试验结果表明,氯铂酸催化剂能促进 HPSO-VPSO 体系的交联,从而提高体系的陶瓷产率。HPSO-VPSO 从室温到1200℃的质量耗损约为45%,主要的质量耗损过程发生在370~825℃之间。在1300℃及以下裂解产物为非晶态物质,在1300~1400℃范围内裂解产物发生结晶,形成 SiC 和 SiO2晶体。
陶瓷及陶瓷基複閤材料的連接技術具有重要的工程意義。鑒于採用以含氫聚硅氧烷(HPSO)和含乙烯基聚硅氧烷(VPSO)的混閤物(用 HPSO-VPSO 錶示)為主要成分的連接劑能夠有效地連接 SiC 陶瓷,採用熱重法(TG)、差熱掃描量熱法(DSC)、紅外光譜(IR)以及 X 射線衍射(XRD)研究 HPSO-VPSO 體繫的交聯和裂解過程。試驗結果錶明,氯鉑痠催化劑能促進 HPSO-VPSO 體繫的交聯,從而提高體繫的陶瓷產率。HPSO-VPSO 從室溫到1200℃的質量耗損約為45%,主要的質量耗損過程髮生在370~825℃之間。在1300℃及以下裂解產物為非晶態物質,在1300~1400℃範圍內裂解產物髮生結晶,形成 SiC 和 SiO2晶體。
도자급도자기복합재료적련접기술구유중요적공정의의。감우채용이함경취규양완(HPSO)화함을희기취규양완(VPSO)적혼합물(용 HPSO-VPSO 표시)위주요성분적련접제능구유효지련접 SiC 도자,채용열중법(TG)、차열소묘량열법(DSC)、홍외광보(IR)이급 X 사선연사(XRD)연구 HPSO-VPSO 체계적교련화렬해과정。시험결과표명,록박산최화제능촉진 HPSO-VPSO 체계적교련,종이제고체계적도자산솔。HPSO-VPSO 종실온도1200℃적질량모손약위45%,주요적질량모손과정발생재370~825℃지간。재1300℃급이하렬해산물위비정태물질,재1300~1400℃범위내렬해산물발생결정,형성 SiC 화 SiO2정체。
Joining of ceramics and ceramic matrix composites is of importance to extend the engineering applications of the materials. In view of the fact that successful joining of SiC ceramic has been achieved using the joining agent based on the mixture of hydrogen-containing polysiloxane and vinyl-containing polysiloxane (denoted by HPSO-VPSO), it is necessary to investigate the crosslinking and pyrolysis of the mixture in order to reach a better understanding of the mechanism of the joining. The crosslinking and pyrolysis of HPSO-VPSO were studied by thermogravimetry (TG), differential scanning calorimetry (DSC), infra-red spectroscopy (IR), and X-ray diffraction (XRD). The results show that, chloroplatinic acid (H2PtCl6) catalyst can effectively improve the crosslinking of HPSO-VPSO, which contributes to the increase of the ceramic yield. The mass loss of the crosslinked HPSO-VPSO is about 45% in the temperature range of room temperature to 1 200 ℃. The main mass loss takes place in the range of 370~825 ℃. The pyrolyzate of HPSO-VPSO pyrolyzed at 1 300 ℃ and below this temperature forms amorphous material. The crystallization of the pyrolyzate takes place between 1 300 ℃ and 1 400 ℃, leading to the formation of crystalline SiC and SiO2.