CAJ | 학술논문

采用磁控溅射法在阳极氧化预处理过的铝板上沉积氮化铝薄膜，制备氮化铝-铝复合基板。制备的氮化铝为非晶态，抗电强度超过700 V/μm，阳极氧化铝抗电强度达75 V/μm。当阳极氧化铝膜厚约10μm、氮化铝膜约1μm时，制备的复合封装基板击穿电压超过1350 V，绝缘电阻率1.7×106 MΩ·cm，氮化铝与铝板的结合强度超过8 MPa；阳极氧化铝膜作为缓冲层有效缓解了氮化铝与铝热膨胀系数失配的问题，在260℃热冲击下，铝板未发生形变，氮化铝膜未破裂，电学性能无明显变化。氮化铝与阳极氧化膜的可见光高透性保持了镜面抛光金属铝的高反射率，当该复合基板应用于LED芯片COB封装时，有助于提高封装光效。
채용자공천사법재양겁양화예처리과적려판상침적담화려박막，제비담화려-려복합기판。제비적담화려위비정태，항전강도초과700 V/μm，양겁양화려항전강도체75 V/μm。당양겁양화려막후약10μm、담화려막약1μm시，제비적복합봉장기판격천전압초과1350 V，절연전조솔1.7×106 MΩ·cm，담화려여려판적결합강도초과8 MPa；양겁양화려막작위완충층유효완해료담화려여려열팽창계수실배적문제，재260℃열충격하，려판미발생형변，담화려막미파렬，전학성능무명현변화。담화려여양겁양화막적가견광고투성보지료경면포광금속려적고반사솔，당해복합기판응용우LED심편COB봉장시，유조우제고봉장광효。
AlN-Al composite substrate is fabricated by depositing AlN thin film on the anodized aluminum. The AlN and Anodized Aluminum Oxidation (AAO) film are amorphous and the dielectric strength exceeding 700 V/μm and 75 V/μm, respectively. When the thicknesses of AlN and AAO are 1μm and 10μm, the breakdown voltage and resistivity are larger than 1350 V and 1.7×106 MΩ·cm. The bond strength of AlN and Al reaches 8 MPa. AAO film, as a buffer layer, reduces the mismatch of Temperature Expansion Coefficient (TEC) between AlN and Al. Thus, when the temperature of thermal shock reaches 260℃, the aluminum substrate does not deform, and the AlN film not crack. The high transparency of AlN and AAO film keeps the high reflectivity of polished aluminum. Thus AlN-Al substrate can improve the light extraction, when used in the COB package of LED chip.