CAJ | 학술논문

　　文章设计并搭建了一个金属氧化物半导体材料光电流谱测试平台。采用溶胶凝胶的方法在FTO上制作了掺杂Al的ZnO多孔膜材料并测试了其光电流谱。通过测试结果可以看到，相对于纯ZnO，掺杂Al的ZnO多孔膜在入射光波长为480nm时有明显响应，同时响应的绝对值也较高。这是由于掺杂Al导致多孔膜中Zn空位增加而引起的。这个现象表明掺杂的方式会引入特定的缺陷，使得材料在本征光电导区间外也有一定的响应，可以扩展了材料的波长响应区间。同时，我们的研究也表明，光电流谱的测试方式可以原位、直接、快速和准确地表征材料中缺陷对光电性能的影响。
　　문장설계병탑건료일개금속양화물반도체재료광전류보측시평태。채용용효응효적방법재FTO상제작료참잡Al적ZnO다공막재료병측시료기광전류보。통과측시결과가이간도，상대우순ZnO，참잡Al적ZnO다공막재입사광파장위480nm시유명현향응，동시향응적절대치야교고。저시유우참잡Al도치다공막중Zn공위증가이인기적。저개현상표명참잡적방식회인입특정적결함，사득재료재본정광전도구간외야유일정적향응，가이확전료재료적파장향응구간。동시，아문적연구야표명，광전류보적측시방식가이원위、직접、쾌속화준학지표정재료중결함대광전성능적영향。
In this paper, a metal oxide semiconductor photocurrent spectrum test platform is designed and set up. The Al-doped ZnO porous film is prepared by sol-gel method on the FTO substrate, and its photocurrent spectrum is tested. From the result we can see that the Al-doped ZnO porous film shows an obvious response at the incident wavelength of 480nm, which has a big discrepancy to the as-grown ZnO, and its response amplitude is higher. This is attributed to the Zn vacancy increase in the porous film which introduced by the Al doping. The result shows that the doping method may introduce specific defects to the material and extend the material's response wavelength. At the meantime, the photocurrent spectrum test can characterize the effect of the defects in the material on the photoelectrical performance directly, rapidly, accurately and in-situ.