真空与低温
真空與低溫
진공여저온
VACUUM AND CRYOGENICS
2014年
3期
132-135
,共4页
曹洲%把得东%薛玉雄%高欣%安恒%陈世军%翟厚明
曹洲%把得東%薛玉雄%高訢%安恆%陳世軍%翟厚明
조주%파득동%설옥웅%고흔%안항%진세군%적후명
单粒子效应%脉冲激光%CMOS APS图像传感器
單粒子效應%脈遲激光%CMOS APS圖像傳感器
단입자효응%맥충격광%CMOS APS도상전감기
single event effects%pulsed laser beam%CMOS APS image sensor
针对设计研制的512×512 CMOS APS 图像传感器，采用聚焦脉冲激光束研究了其空间单粒子效应特性。试验结果表明，CMOS APS器件图像传感器存在单粒子翻转（SEU）和单粒子锁定（SEL）现象。验证了CMOS APS图像传感器抗单粒子锁定设计的有效性。当对图像传感器移位寄存器区进行照射时，同时发生单粒子翻转和单粒子锁定，器件其它区域也有类似现象。分析了器件单粒子效应的敏感性，获得了器件发生单粒子翻转和锁定的脉冲激光能量阈值及器件锁定电流大小。
針對設計研製的512×512 CMOS APS 圖像傳感器，採用聚焦脈遲激光束研究瞭其空間單粒子效應特性。試驗結果錶明，CMOS APS器件圖像傳感器存在單粒子翻轉（SEU）和單粒子鎖定（SEL）現象。驗證瞭CMOS APS圖像傳感器抗單粒子鎖定設計的有效性。噹對圖像傳感器移位寄存器區進行照射時，同時髮生單粒子翻轉和單粒子鎖定，器件其它區域也有類似現象。分析瞭器件單粒子效應的敏感性，穫得瞭器件髮生單粒子翻轉和鎖定的脈遲激光能量閾值及器件鎖定電流大小。
침대설계연제적512×512 CMOS APS 도상전감기，채용취초맥충격광속연구료기공간단입자효응특성。시험결과표명，CMOS APS기건도상전감기존재단입자번전（SEU）화단입자쇄정（SEL）현상。험증료CMOS APS도상전감기항단입자쇄정설계적유효성。당대도상전감기이위기존기구진행조사시，동시발생단입자번전화단입자쇄정，기건기타구역야유유사현상。분석료기건단입자효응적민감성，획득료기건발생단입자번전화쇄정적맥충격광능량역치급기건쇄정전류대소。
The single event effects of 512 ×512 CMOS active pixel image sensors fabricated by Key Laboratory of Infra-red-materials and Devices has been study experimentally by using pulsed laser beams.The single event upsets ( SEU) and single event latchup (SEL) has been observed when CMOS active pixel image sensors exposure to pulsed laser beam.The validity of measures on chip against to SEL has been verified.At the cases of shift register area where exposure to pulsed la-ser beam, the SEU and SEL has been observed simultaneously.The same phenomenon has been also observed in the other areas on chip.The characteristic of single event effects on CMOS active pixel sensor has been analyzed.The critical energy of pulsed laser beam inducing SEU and SEL has been gained and the current value of SEL has been measured experimentally.
