广西大学学报(自然科学版)
廣西大學學報(自然科學版)
엄서대학학보(자연과학판)
JOURNAL OF GUANGXI UNIVERSITY (NATURAL SCIENCE EDITION)
2014年
3期
673-679
,共7页
LTE-A%随机接入%基带信号%DFT/IDFT
LTE-A%隨機接入%基帶信號%DFT/IDFT
LTE-A%수궤접입%기대신호%DFT/IDFT
LTE-A%PRACH%baseband signal%DFT/IDFT
为了研究LTE/LTE-A 系统中物理随机接入基带信号产生的简化算法,减少实现的复杂度,通过对LTE-A协议的研究,分析随机接入基带信号产生公式,推导出基带信号产生实现的步骤;对PRACH格式0~3和格式4进行了详细研究,对基带信号的产生提出了三种解决方案;对PRACH格式0~3中的24576点的DFT和IDFT算法简化进行了研究,并分别从时域和频域进行了算法仿真验证和比较。分析结果表明,方案3为最佳实现方案,将插值点直接定义为每个数据的重复,将24576点IDFT简化为统一进行2048点IDFT。上述PRACH基带信号实现方法在LTE-A基带芯片中得到了工程的实际运用。
為瞭研究LTE/LTE-A 繫統中物理隨機接入基帶信號產生的簡化算法,減少實現的複雜度,通過對LTE-A協議的研究,分析隨機接入基帶信號產生公式,推導齣基帶信號產生實現的步驟;對PRACH格式0~3和格式4進行瞭詳細研究,對基帶信號的產生提齣瞭三種解決方案;對PRACH格式0~3中的24576點的DFT和IDFT算法簡化進行瞭研究,併分彆從時域和頻域進行瞭算法倣真驗證和比較。分析結果錶明,方案3為最佳實現方案,將插值點直接定義為每箇數據的重複,將24576點IDFT簡化為統一進行2048點IDFT。上述PRACH基帶信號實現方法在LTE-A基帶芯片中得到瞭工程的實際運用。
위료연구LTE/LTE-A 계통중물리수궤접입기대신호산생적간화산법,감소실현적복잡도,통과대LTE-A협의적연구,분석수궤접입기대신호산생공식,추도출기대신호산생실현적보취;대PRACH격식0~3화격식4진행료상세연구,대기대신호적산생제출료삼충해결방안;대PRACH격식0~3중적24576점적DFT화IDFT산법간화진행료연구,병분별종시역화빈역진행료산법방진험증화비교。분석결과표명,방안3위최가실현방안,장삽치점직접정의위매개수거적중복,장24576점IDFT간화위통일진행2048점IDFT。상술PRACH기대신호실현방법재LTE-A기대심편중득도료공정적실제운용。
In order to study the simplified algorithm of random access baseband signal generator and reduce implementation complexity, the equation of the random access baseband signal generator is analyzed at first, and the realizing steps of generating the baseband signal are deduced, according to the research of LTE-A agreement. Through detailed study of PRACH format 0~3 and 4, three solu-tion schemes for generating baseband signal are proposed. Finally, the simplifications of DFT algo-rithm and IDFT algorithm of 24 576 points in PRACH format 0~3 are studied, and they are simula-ted in time domain and in frequency domain respectively as well as are compared with each other. The results show the third scheme is the best one, which defines directly interpolation points as re-peat of each data and simplifies the 24 576-point IDFT to the unified 2 048-point IDFT. The pres-ented implementation of PRACH baseband signal has been applied in the practical engineering in LTE/LTE-A baseband chip.