CAJ | 학술논문

针对两种应用于大功率领域的半导体器件--栅控晶闸管（MCT）和组合式绝缘栅晶体管（CIGBT），采用数值仿真软件进行了比较研究。静态仿真结果表明MCT具有更低的正向压降，只有CIGBT的50%左右，而CIGBT得益于其电流饱和特性，具有更大的短路安全工作区。开关仿真结果表明CIGBT具有比MCT更短的关断时间和更小的关断能量，更适合应用于高频领域。同时研究了MCT和CIGBT在脉冲放电应用中的特性，结果表明MCT具有更大的脉冲峰值电流和更快的电流上升率，并首次论证了脉冲放电过程中器件物理机制的区别。
침대량충응용우대공솔영역적반도체기건--책공정갑관（MCT）화조합식절연책정체관（CIGBT），채용수치방진연건진행료비교연구。정태방진결과표명MCT구유경저적정향압강，지유CIGBT적50%좌우，이CIGBT득익우기전류포화특성，구유경대적단로안전공작구。개관방진결과표명CIGBT구유비MCT경단적관단시간화경소적관단능량，경괄합응용우고빈영역。동시연구료MCT화CIGBT재맥충방전응용중적특성，결과표명MCT구유경대적맥충봉치전류화경쾌적전류상승솔，병수차론증료맥충방전과정중기건물리궤제적구별。
Two semiconductor devices which are used in high power applications are investigated by numerical simulation tool in the paper. The static simulation results indicate that the saturation voltage of MOS controlled thyristor (MCT) is only half of the clustered IGBT (CIGBT). However, CIGBT has larger short circuit safe operation area (SCSOA) because of the current saturation characteristic. The inductive load switching simulation results indicate CIGBT has shorter turn-off time and lower turn-off energy, which makes it more superior in high frequency applications. Meanwhile, the pulsed discharge performance is also investigated. The simulation results indicate MCT has higher peak current value and current change rate. The physical operation mechanism is analysed to explain the performance difference.