CAJ | 학술논문

利用磁控溅射技术在镀铂硅片上制备ZnO薄膜， X射线衍射测试表明ZnO薄膜为纯相结构，原子力显微镜测试显示 ZnO 薄膜表面平整均匀，均方根粗糙度为1.87 nm.在室温下对Au/ZnO/Pt三明治结构的电输运行为进行了研究，结果表明同时存在电致电阻转变效应和光伏效应，并且光照可调控电致电阻.当光强为360μW·cm-2时，电阻调控幅度达78%，这种光调控的电致电阻转变有助于实现多态存储，提高存储密度.
이용자공천사기술재도박규편상제비ZnO박막， X사선연사측시표명ZnO박막위순상결구，원자력현미경측시현시 ZnO 박막표면평정균균，균방근조조도위1.87 nm.재실온하대Au/ZnO/Pt삼명치결구적전수운행위진행료연구，결과표명동시존재전치전조전변효응화광복효응，병차광조가조공전치전조.당광강위360μW·cm-2시，전조조공폭도체78%，저충광조공적전치전조전변유조우실현다태존저，제고존저밀도.
ZnO film is prepared on Pt/Ti/SiO2/Si substrate by magnetron sputtering. The X-ray diffraction and atomic force microscope are employed to characterize its structure and surface morphology, respectively. The result shows that the ZnO film has a pure phase and a smooth surface with a root-mean-square roughness of 1.87 nm. At room temperature, the electrical transport property of the Au/ZnO/Pt structure is investigated. It further shows that the photovoltaic effect and the electric field induce the resistive switching effect co-existing in the sample. Furthermore, the electric field induced resistance can be tuned by varying illumination, and the resistive adjustability can reach as high as 78% when the illumination with 360 μW·cm-2 is applied. The photo-tuned resistive switching contributes to both the favored multi-resistance state storage and the storage density.