CAJ | 학술논문

针对40 Gb/s 光通信系统对高速芯片的需求，设计出一种微波单片宽带驱动放大器。该放大器基于0．15μm砷化镓赝配高电子迁移率晶体管工艺，可用于驱动铌酸锂调制器。放大器的宽带实现方案选择分布式拓扑结构，增益单元选择带有耦合电容的共源共栅结构。利用 ADS 仿真软件进行设计仿真，结果显示，所设计的放大器在DC-35 GHz的工作带宽内增益响应平坦，电压增益大于10 dB，增益平坦度为±0．5 dB，具驻波特性良好，其输入、输出反射系数在频带内的典型值均小于-10 dB；在1 dB压缩点的输出功率为20 dBm，故设计方案可行。
침대40 Gb/s 광통신계통대고속심편적수구，설계출일충미파단편관대구동방대기。해방대기기우0．15μm신화가안배고전자천이솔정체관공예，가용우구동니산리조제기。방대기적관대실현방안선택분포식탁복결구，증익단원선택대유우합전용적공원공책결구。이용 ADS 방진연건진행설계방진，결과현시，소설계적방대기재DC-35 GHz적공작대관내증익향응평탄，전압증익대우10 dB，증익평탄도위±0．5 dB，구주파특성량호，기수입、수출반사계수재빈대내적전형치균소우-10 dB；재1 dB압축점적수출공솔위20 dBm，고설계방안가행。
A micro-wave wideband amplifier used to drive the LiNbO3 modulator is designed in this paper to meet the demand of the high-speed chips in 40 Gb/s optical communication system. The amplifier is based on 0 .1 5 μm GaAs pseudomorphic high electron mobility transistor (PHEMT)process and consists of six-stages cascode cells with capacitive coupling.This ampli-fier has very flat gain in the bandwidth DC-35 GHz and its gain is higher than 10 dB and flatness better than ±0.5 dB.Also,this amplifier has good VSWR at the input and output port that is below -10 dB and its output power at 1 dB compression point is about 20dBm.Therefore the de-sign is feasible.