电子科技学刊
電子科技學刊
전자과기학간
JOURNAL OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
2014年
2期
173-181
,共9页
Emerging memory technology%ferroelectric RAM%low power%magnetic RAM%non-volatile flip-flops%phase change RAM%resistive RAM
Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things (IoT) deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory (DRAM) with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops (NVFFs) seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies.