建筑电气
建築電氣
건축전기
BUILDING ELECTRICITY
2014年
6期
44-48,49
,共6页
陈勇伟%王晶晶%王琦%赵全庆%董晨亮
陳勇偉%王晶晶%王琦%趙全慶%董晨亮
진용위%왕정정%왕기%조전경%동신량
ZnO压敏电阻%限压型SPD%非线性系数α%ZnO 晶粒%费米能级%交流老化%肖特基势垒%伏安特性
ZnO壓敏電阻%限壓型SPD%非線性繫數α%ZnO 晶粒%費米能級%交流老化%肖特基勢壘%伏安特性
ZnO압민전조%한압형SPD%비선성계수α%ZnO 정립%비미능급%교류노화%초특기세루%복안특성
ZnO varistor%voltage limiting type SPD%nonlinear coefficient α%ZnO grain%Fermi level%AC aging%Schottky barrier%volt-ampere characteristics
限压型电涌保护器(SPD)的老化问题,经分析是由于ZnO压敏电阻内部的离子迁移导致肖特基势垒的畸变,从而引起泄漏电流与压敏电压增加等。通过对几组ZnO 压敏电阻在老化环境下的试验,分析老化前后压敏电阻性能参数的变化,得到如下结论:①交流老化过程中,压敏电压和漏流存在一定的逆老化现象,但压敏电压和漏流随老化呈增长趋势;②交流老化时,压敏电阻温度的升高与加热时间、施加电流以及老化程度有关,伏安特性曲线发生对称漂移;③交流老化之后,压敏电阻内阻的变化不大,且局部有降低的趋势,分布电容、阻抗和非线性系数的变化较小。
限壓型電湧保護器(SPD)的老化問題,經分析是由于ZnO壓敏電阻內部的離子遷移導緻肖特基勢壘的畸變,從而引起洩漏電流與壓敏電壓增加等。通過對幾組ZnO 壓敏電阻在老化環境下的試驗,分析老化前後壓敏電阻性能參數的變化,得到如下結論:①交流老化過程中,壓敏電壓和漏流存在一定的逆老化現象,但壓敏電壓和漏流隨老化呈增長趨勢;②交流老化時,壓敏電阻溫度的升高與加熱時間、施加電流以及老化程度有關,伏安特性麯線髮生對稱漂移;③交流老化之後,壓敏電阻內阻的變化不大,且跼部有降低的趨勢,分佈電容、阻抗和非線性繫數的變化較小。
한압형전용보호기(SPD)적노화문제,경분석시유우ZnO압민전조내부적리자천이도치초특기세루적기변,종이인기설루전류여압민전압증가등。통과대궤조ZnO 압민전조재노화배경하적시험,분석노화전후압민전조성능삼수적변화,득도여하결론:①교류노화과정중,압민전압화루류존재일정적역노화현상,단압민전압화루류수노화정증장추세;②교류노화시,압민전조온도적승고여가열시간、시가전류이급노화정도유관,복안특성곡선발생대칭표이;③교류노화지후,압민전조내조적변화불대,차국부유강저적추세,분포전용、조항화비선성계수적변화교소。
The aging of voltage limiting type SPD resulted from the distortion of Schottky barrier due to the ionic migration inside of ZnO varistor after analysis, thereby leading to increases of leakage current and varistor voltage. The change of varistor performance parameters before and after the aging is analyzed through the test of several groups of ZnO varistors under the aging environment . Following conclusions are made: ① Although reverse aging exists in varistor voltage and leakage current during the AC aging, the varistor voltage and leakage current tend to increase with the aging; ② The elevated temperature of varistor is related with heating time, applied current and degree of aging during the AC aging. Symmetric drift occurs to volt-ampere characteristic curve; ③ The internal resistance of varistor shows insignificant change and reduces locally after AC aging. The distributed capacitance, impedance and nonlinear coefficient change slightly.