激光杂志
激光雜誌
격광잡지
LASER JOURNAL
2014年
6期
44-47
,共4页
光波导%表面等离子激元%介质-金属-介质%传输距离
光波導%錶麵等離子激元%介質-金屬-介質%傳輸距離
광파도%표면등리자격원%개질-금속-개질%전수거리
Waveguide%Surface plasmon polariton%Dielectric-metal-dielectric%Propagation distances
采用严格电磁理论研究了介质-金属-介质型光波导激发表面等离子激元(SPPs)的电磁特性,对比分析了SPP波在SiO2/Ag/SiO2和Si/Ag/Si光波导的传输距离。研究表明,对于1550nm光通信波长入射光及10nm厚的金属银膜层,SiO2/Ag/SiO2光波导中非对称SPP的传输距离可达40cm,明显高于对称SPP波的传输距离,也显著高于非对称SPP波在Si/Ag/Si波导中的传输距离,具有超长传输距离;随着金属层厚度的增加SPP波的传输距离明显减小,当银层厚度超过50nm后,非对称的SPP在SiO2/Ag/SiO2及Si/Ag/Si波导中的传输距离趋于一致,约为200nm;此时银层厚度变化对SPP波传输距离的影响明显减弱。
採用嚴格電磁理論研究瞭介質-金屬-介質型光波導激髮錶麵等離子激元(SPPs)的電磁特性,對比分析瞭SPP波在SiO2/Ag/SiO2和Si/Ag/Si光波導的傳輸距離。研究錶明,對于1550nm光通信波長入射光及10nm厚的金屬銀膜層,SiO2/Ag/SiO2光波導中非對稱SPP的傳輸距離可達40cm,明顯高于對稱SPP波的傳輸距離,也顯著高于非對稱SPP波在Si/Ag/Si波導中的傳輸距離,具有超長傳輸距離;隨著金屬層厚度的增加SPP波的傳輸距離明顯減小,噹銀層厚度超過50nm後,非對稱的SPP在SiO2/Ag/SiO2及Si/Ag/Si波導中的傳輸距離趨于一緻,約為200nm;此時銀層厚度變化對SPP波傳輸距離的影響明顯減弱。
채용엄격전자이론연구료개질-금속-개질형광파도격발표면등리자격원(SPPs)적전자특성,대비분석료SPP파재SiO2/Ag/SiO2화Si/Ag/Si광파도적전수거리。연구표명,대우1550nm광통신파장입사광급10nm후적금속은막층,SiO2/Ag/SiO2광파도중비대칭SPP적전수거리가체40cm,명현고우대칭SPP파적전수거리,야현저고우비대칭SPP파재Si/Ag/Si파도중적전수거리,구유초장전수거리;수착금속층후도적증가SPP파적전수거리명현감소,당은층후도초과50nm후,비대칭적SPP재SiO2/Ag/SiO2급Si/Ag/Si파도중적전수거리추우일치,약위200nm;차시은층후도변화대SPP파전수거리적영향명현감약。
A numerical analysis of surface plasmon waveguides exhibiting both long-range propagation and spa-tial confinement of light with lateral dimensions is presented. Attention is given to characterizing the dispersion rela-tions, wavelength-dependent propagation, and energy density decay in two-dimensional dielectric-metal-dielectric structures. It is shows that if the thickness of the metal film is sufficiently small, the metal adjacent to the upper and lower interfaces with the dielectric at the excitation of the surface plasmon polariton (SPPs) will produce coupled and split into symmetrical and anti-symmetrical SPP. The transmission distance of the anti-symmetric mode in SiO2/Ag/SiO2 waveguide is up to~400 mm for incident light of 1550nm and the metal film thickness of 10nm. The trans-mission distance in the Si/Ag/Si waveguide is only ~ 9.2mm, which much lower than the transmission distance in SiO2/Ag/SiO2 waveguide. With the increase of the metal film thickness, the transmission distance of SPP significant-ly reduced. When the metal film is thicker than 50nm, the transmission distance is about 200nm for the anti-symme-try of SPP in SiO2/Ag/SiO2 and Si/Ag/Si waveguides. For a anti-ymmetric mode, this is the opposite trend. Symmet-ric and anti-symmetric SPP mode decays exponentially along the vertical interface of the dielectric layer. The attenua-tion distances of the symmetrical and anti-symmetrical SPP in the Si are approximately 400nm and 500nm, respec-tively. And the attenuation distances in the SiO2 is about 2μm and 3μm, which much larger than the distances in the Si.