CAJ | 학술논문

制备了Pt/CdS Schottky紫外探测器，对Pt/CdS Schottky紫外芯片对中波红外（3～5μm）的透过率进行了研究，并对器件光电性能进行了测试分析。通过优化 Pt 电极制备条件及对 SiO2增透膜的研究，使Pt/CdS Schottky紫外芯片对中波红外波段的透过率达到85%。室温300 K下，所制备Pt/CdS Schottky紫外探测器在零偏压处的背景光电流为-0.063 nA，在＋6 V时的暗电流密度为7.6×10-7 A/cm2，R0A达到7.2×104?·cm2，其50%截止波长为510 nm。
제비료Pt/CdS Schottky자외탐측기，대Pt/CdS Schottky자외심편대중파홍외（3～5μm）적투과솔진행료연구，병대기건광전성능진행료측시분석。통과우화 Pt 전겁제비조건급대 SiO2증투막적연구，사Pt/CdS Schottky자외심편대중파홍외파단적투과솔체도85%。실온300 K하，소제비Pt/CdS Schottky자외탐측기재령편압처적배경광전류위-0.063 nA，재＋6 V시적암전류밀도위7.6×10-7 A/cm2，R0A체도7.2×104?·cm2，기50%절지파장위510 nm。
Pt/CdS Schottky UV detector was prepared successfully, the mid-wavelength(3-5 μm) transmits property of Pt/CdS Schottky chip was researched, and the photoelectric characteristics of the detector were studied. The transmittance of the chip was 85%by the grown condition of Pt electrode and the anti-reflection effect of SiO2 deposited layer being optimized. The photo response spectra of the Pt/CdS Schottky diode was tested at room temperature and its zero bias current is -0.063 nA, the dark current density is 7.6×10-7 A/cm2 at a reverse bias of -6 V, and the dynamic impedance value of R0A=7.2×104?·cm2, the 50%cutoff wavelength is 510 nm.