CAJ | 학술논문

极紫外光刻是微电子领域有望用于下一代线宽为22 nm及以下节点的商用投影光刻技术，光刻材料的性能与工艺是其关键技术之一。为我国开展极紫外光刻材料研究提供参考，综述了最近几年来文献报道的研究成果，介绍了极紫外光刻技术发展历程、现状、光刻特点及对光刻材料的基本要求，总结了极紫外光刻材料的研究领域和具体分类，着重阐述了主要光刻材料的组成、光刻原理，光刻性能所达到的水平和存在的主要问题，最后探讨了极紫外光刻材料未来的主要研究方向。
겁자외광각시미전자영역유망용우하일대선관위22 nm급이하절점적상용투영광각기술，광각재료적성능여공예시기관건기술지일。위아국개전겁자외광각재료연구제공삼고，종술료최근궤년래문헌보도적연구성과，개소료겁자외광각기술발전역정、현상、광각특점급대광각재료적기본요구，총결료겁자외광각재료적연구영역화구체분류，착중천술료주요광각재료적조성、광각원리，광각성능소체도적수평화존재적주요문제，최후탐토료겁자외광각재료미래적주요연구방향。
Extreme ultraviolet Lithography (EUVL) has been considered as the strong candidate for next generation commercial projection lithography to print sub - 22 nm half - pitch (HP) features in microelectronics field. Performance and technology of resists is one of the key parts of EUVL. In order to improve the research work in China, recent progress of EUV resists reported in near years was reviewed. The history and current status of EUVL were introduced. EUVL’ features and targets on resists were presented. EUV resist research portfolio and its classification were summarized. Composition, mechanism and performances for EUVL of representative resists were focused. Performance possibility and problems of the different resists were also analyzed; Routes in the future to improve EUVL performances for them were finally discussed.