CAJ | 학술논문

采用微带混合集成工艺设计了一款W波段宽带pin管开关．通过建立pin管的Ansoft HF-SS模型，实现了开关整体的精确仿真．分析了开关结构中主传输线特性对隔离度的影响，在此基础上采用高阻抗主传输线有效地提高了开关的隔离度，进而展宽了开关的隔离度带宽．为了获得开关的宽带导通特性，采用行波技术补偿pin管反向偏置时寄生参量的影响．为了验证该设计方法的正确性，对所设计的开关进行了加工、测试．测试结果表明：开关在87～103．5 GHz频率范围内，隔离度大于30 dB；在80～90 GHz频率范围内，开关导通时的插损小于1．2 dB；在90～95 GHz频率范围内，开关导通时插损小于1．5 dB ．仿真结果与测试结果吻合良好．
채용미대혼합집성공예설계료일관W파단관대pin관개관．통과건립pin관적Ansoft HF-SS모형，실현료개관정체적정학방진．분석료개관결구중주전수선특성대격리도적영향，재차기출상채용고조항주전수선유효지제고료개관적격리도，진이전관료개관적격리도대관．위료획득개관적관대도통특성，채용행파기술보상pin관반향편치시기생삼량적영향．위료험증해설계방법적정학성，대소설계적개관진행료가공、측시．측시결과표명：개관재87～103．5 GHz빈솔범위내，격리도대우30 dB；재80～90 GHz빈솔범위내，개관도통시적삽손소우1．2 dB；재90～95 GHz빈솔범위내，개관도통시삽손소우1．5 dB ．방진결과여측시결과문합량호．
A broadband W-band switch is presented using microstrip hybrid microwave integrated circuit.The accurate simulation of entire switch is achieved by building the model of pin diode in Ansoft HFSS (High Frequency Structure Simulator).Effects of the main transmission line character-istics of the switch on the isolation performance are analyzed.The isolation of the switch is efficient-ly improved using high-impedance main transmission lines and then the isolation bandwidth of the switch is also broadened.To obtain a broadband on-state bandwidth of the switch,the traveling wave technology is adopted to compensate the parasitic parameters of the diode in the reverse bias state.In order to validate the proposed design method,the developed switch is fabricated and meas-ured.The measurement results show that the isolation of the switch is greater than 30 dB in the fre-quency range of 87 to 103.5 GHz.Insertion loss less than 1.2 dB in the frequency range of 80 to 90 GHz and 1 .5 dB in the frequency range of 90 to 95 GHz are achieved under on-state,respectively. The simulation results agree well with the measured ones.