中南大学学报（英文版）
中南大學學報（英文版）
중남대학학보（영문판）
JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY(ENGLISH EDITION)
2014年
6期
2292-2297
,共6页
王斌%张鹤鸣%胡辉勇%张玉明%周春宇%李妤晨
王斌%張鶴鳴%鬍輝勇%張玉明%週春宇%李妤晨
왕빈%장학명%호휘용%장옥명%주춘우%리여신
buried-pMOSFET%strained-SiGe%plateau%threshold-voltage%substrate-doping%Ge-fraction
The effect of substrate doping on the threshold voltages of buried channel pMOSFET based on strained-SiGe technology was studied. By physically deriving the models of the threshold voltages, it is found that the layer which inversely occurs first is substrate doping dependent, giving explanation for the variation of plateau observed in theC-V characteristics of this device, as the doping concentration increases. The threshold voltages obtained from the proposed model are-1.2805 V for buried channel and-2.9358 V for surface channel at a lightly doping case, and-3.41 V for surface channel at a heavily doping case, which agrees well with the experimental results. Also, the variations of the threshold voltages with several device parameters are discussed, which provides valuable reference to the designers of strained-SiGe devices.
